2010 Publications

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  • 1st Capacitive-Piezoelectric Transducer [2010]
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  • First Demonstration of Silicide-Based Gaps [2010]
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  • Simultaneous Strong Electromechanical Coupling and High Q Via Partial ALD-Filled Gaps [2010]
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The year 2010 introduced numerous firsts: a silicide-based release process that made possible instant formation of high aspect-ratio gaps without a need for lengthy undercut etching; the capacitive-piezoelectric transducer that maximizes the quality factor of any piezoelectric device while enhancing drift stability; and partial-ALD filling to achieve electrode-to-resonator gaps smaller than 50 nm–all methods still in use today.

L.-W. Hung and C. T.-C. Nguyen, “Silicide-Based Release of High Aspect Ratio Microstructures,” Tech. Digest, 23rd IEEE Int. Conf. on Micro Electro Mechanical Systems (MEMS’10), Hong Kong, China, Jan. 24-28, 2010, pp. 120-123.

B. Kim, M. Akgul, Y. Lin, W.-C. Li, Z. Ren, and C. T.-C. Nguyen, “Acceleration sensitivity of small-gap capacitive micromechanical resonator oscillators,” Proceedings, 2010 IEEE Int. Frequency Control Symp., Newport Beach, California, June 1-4, 2010, pp. 273-278.

L.-W. Hung and C. T.-C. Nguyen, “Capacitive-piezo transducers for higher Q contour-mode AlN resonators at 1.2 GHz,” Tech. Digest, 2008 Solid-State Sensor, Actuator, and Microsystems Workshop, Hilton Head, South Carolina, June 6-10, 2010, pp. 463-466.

M. Akgul, B. Kim, Z. Ren, and C. T.-C. Nguyen, “Capacitively transduced micromechanical resonators with simultaneous low motional resistance and Q >70,000,” Tech. Digest, 2008 Solid-State Sensor, Actuator, and Microsystems Workshop, Hilton Head, South Carolina, June 6-10, 2010, pp. 467-470.

L.-W. Hung and C. T.-C. Nguyen, “Q-boosted AlN array-composite resonator with Q >10,000,” Tech. Digest, IEEE Int. Electron Devices Mtg., San Francisco, California, Dec. 6-8, 2010, pp. 162-165.