Laboratory for Emerging and Exploratory Devices

2015

Bakaul, S., Serrao, C., Youun, L., Khan, A. & Salahuddin, S. Single crystal ternary oxide ferroelectric integration with Silicon in APS March Meeting Abstracts 1 (2015), 6005.

Bhowmik, D., Nowakowski, M. E., You, L., Lee, O., Keating, D., Wong, M., Bokor, J. & Salahuddin, S. Deterministic Domain Wall Motion Orthogonal To Current Flow Due To Spin Orbit Torque. Scientific Reports 5, 11823 (July 2015).

Hu, C., Salahuddin, S., Lin, C.-I. & Khan, A. 0.2 V adiabatic NC-FinFET with 0.6 mA/μm I ON and 0.1 nA/μm I OFF in Device Research Conference (DRC), 2015 73rd Annual (2015), 39–40.

Khan, A., Chatterjee, K., Wang, B., Drapcho, S., You, L., Serrao, C., Bakaul, S., Ramesh, R. & Salahuddin, S. Negative Capacitance transients in a ferroelectric capacitor in APS March Meeting Abstracts 1 (2015), 6009.

Khan, A. I. & Salahuddin, S. 4 Extending CMOS with negative capacitance. CMOS and Beyond, 56 (2015).

Khan, A. I., Chatterjee, K., Wang, B., Drapcho, S., You, L., Serrao, C., Bakaul, S. R., Ramesh, R. & Salahuddin, S. Negative capacitance in a ferroelectric capacitor. Nature materials 14, 182–186 (2015).

Khan, A. I., Marti, X., Serrao, C., Ramesh, R. & Salahuddin, S. Voltage-Controlled Ferroelastic Switch- ing in Pb (Zr0. 2Ti0. 8) O3 Thin Films. Nano letters 15, 2229–2234 (2015).

Khandelwal, S., Kushwaha, P., Medury, A., Duarte, J., Lu, D., Lin, C.-H., Dunga, M., Sriramkumar, V, Yao, S., Morshed, T., et al. BSIM-IMG102. 6.0 Independent Multi-Gate MOSFET Compact Model (2015).

Lee, Y., Liu, Z., Heron, J., Clarkson, J., Hong, J., Ko, C., Biegalski, M., Aschauer, U., Hsu, S.-L., Nowakowski, M., et al. Large resistivity modulation in mixed-phase metallic systems. Nature commu- nications 6 (2015).

Mishra, V., Smith, S., Liu, L., Zahid, F., Zhu, Y., Guo, H. & Salahuddin, S. Screening in Ultrashort (5 nm) Channel MoS¡ sub¿ 2¡/sub¿ Transistors: A Full-Band Quantum Transport Study. IEEE Transac- tions on Electron Devices (2015).

Pattabi, A, Gu, Z, Gorchon, J, Yang, Y, Finley, J, Lee, O., Raziq, H., Salahuddin, S & Bokor, J. Direct optical detection of current induced spin accumulation in metals by magnetization-induced second harmonic generation. Applied Physics Letters 107, 152404 (2015).

Salahuddin, S. Controlling Magnetization using Spin Orbit Torque in APS Meeting Abstracts 1 (2015), 30007.

Serrao, C. R., Diamond, A. M., Hsu, S.-L., You, L., Gadgil, S., Clarkson, J., Carraro, C., Maboudian, R., Hu, C. & Salahuddin, S. Highly crystalline MoS2 thin films grown by pulsed laser deposition. Applied Physics Letters 106, 052101 (2015).

Wong, H.-S. P. & Salahuddin, S. Memory leads the way to better computing. Nature nanotechnology 10, 191–194 (2015).

Wong, J. & Salahuddin, S. Piezoelectric Negative Capacitance (2015).

You, L., Lee, O., Bhowmik, D., Labanowski, D., Hong, J., Bokor, J. & Salahuddin, S. Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy. Proceedings of the National Academy of Sciences 112, 10310–10315 (2015).

You, L., Lee, O., Glenn, T., Abdel-Raziq, H. & Salahuddin, S. Tunable magnetic anisotropy in perpen- dicular exchange-coupled CoFeB/(Co/Pt) films in APS Meeting Abstracts 1 (2015), 30006.

Zhou, Z., Trassin, M., Gao, Y., Gao, Y., Qiu, D., Ashraf, K., Nan, T., Yang, X., Bowden, S., Pierce, D., et al. Probing electric field control of magnetism using ferromagnetic resonance. Nature communications 6 (2015).

2014

Bhowmik, D., You, L. & Salahuddin, S. Spin Hall effect clocking of nanomagnetic logic without a magnetic field. Nature nanotechnology 9, 59–63 (2014).

Bhowmik, D., Nowakowski, M., You, L., Keating, D., Wong, M., Bokor, J. & Salahuddin, S. Driving a uniform magnetization to a metastable, mixed state by Spin Hall Effect Spin Torque in APS March Meeting Abstracts 1 (2014), 8011.

Gao, W., Khan, A., Marti, X., Nelson, C., Serrao, C., Ravichandran, J., Ramesh, R. & Salahuddin, S. Room-temperature negative capacitance in a ferroelectric–dielectric superlattice heterostructure. Nano letters 14, 5814–5819 (2014).

Heron, J., Bosse, J., He, Q, Gao, Y, Trassin, M, Ye, L, Clarkson, J., Wang, C, Liu, J., Salahuddin, S, et al. Deterministic switching of ferromagnetism at room temperature using an electric field. Nature 516, 370–373 (2014).

Hsieh, T.-E., Chang, E. Y., Song, Y.-Z., Lin, Y.-C., Wang, H.-C., Liu, S.-C., Salahuddin, S. & Hu, C. C. Gate Recessed Quasi-Normally OFF Al 2 O 3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer. Electron Device Letters, IEEE 35, 732–734 (2014).

Khan, A. I., Yu, P., Trassin, M., Lee, M. J., You, L. & Salahuddin, S. The effects of strain relaxation on the dielectric properties of epitaxial ferroelectric Pb (Zr0. 2Ti0. 8) TiO3 thin films. Applied Physics Letters 105, 022903 (2014).

Luc, Q. H., Chang, E. Y., Trinh, H. D., Lin, Y. C., Nguyen, H. Q., Wong, Y. Y., Do, H. B., Salahuddin, S. & Hu, C. C. Electrical Characteristics of n, p-In 0.53 Ga 0.47 As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer. Electron Devices, IEEE Transactions on 61, 2774–2778 (2014).

Marti, X, Fina, I, Frontera, C, Liu, J., Wadley, P, He, Q., Paull, R., Clarkson, J., Kudrnovsky`, J, Turek, I, et al. Room-temperature antiferromagnetic memory resistor. Nature materials 13, 367–374 (2014).

Wang, J, Xie, L., Wang, C., Zhang, H., Shu, L, Bai, J, Chai, Y., Zhao, X, Nie, J., Cao, C., et al. Magnetic domain-wall motion twisted by nanoscale probe-induced spin transfer. Physical Review B 90, 224407 (2014).

Winkler, C. R., Jablonski, M. L., Ashraf, K., Damodaran, A. R., Jambunathan, K., Hart, J. L., Wen, J. G., Miller, D. J., Martin, L. W., Salahuddin, S., et al. Real-Time Observation of Local Strain Effects on Nonvolatile Ferroelectric Memory Storage Mechanisms. Nano letters 14, 3617–3622 (2014).

Wong, J. C. & Salahuddin, S. Can piezoelectricity lead to negative capacitance? in Electron Devices Meeting (IEDM), 2014 IEEE International (2014), 13–5.

2013

M. R. Esmaeili-Rad and S. Salahuddin, "High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector," Scientific Reports, vol. 3, 2345, doi:10.1038/srep02345, Aug. 2013.

Asif I Khan, J. Ravichandran, C.W. Yeung, M. J. Lee, L. You, C. Hu, R. Ramesh and S. Salahuddin, “Thickness scaling of ferroelectric negative capacitance,” TECHCON, 2013. [Best in session award].

D. Bhowmik, L. You, S. Salahuddin, “Size dependence of spin Hall effect spin torque switching of perpendicularly polarized magnetic dots,” Magnetism and Magnetic Materials (MMM) conference, 2013.

V. Mishra, S. Smith, K. Ganapathi and S. Salahuddin, “Dependence of intrinsic performance of transition metal dichalcogenide transistors on materials and number of layers at the 5 nm channel-length limit,” Proceedings of International Electron Devices Meeting (IEDM), 2013.

Chatterjee, S., S. Salahuddin, S., Kumar, S., & Mukhopadhyay, S. “Electrothermal analysis of spin-transfer-torque random access memory arrays,” ACM Journal on Emerging Technologies in Computing Systems (JETC), 9(2), 15, 2013.

Yeung, Chun Wing, et al. "Low power negative capacitance FETs for future quantum-well body technology." VLSI Technology, Systems, and Applications (VLSI-TSA), 2013 International Symposium on. IEEE, 2013. [Best Paper Award]

S Venugopalan, MA Karim, S Salahuddin, AM Niknejad, CC Hu, “Phenomenological Compact Model for QM Charge Centroid in Multigate FETs,” Electron Devices, IEEE Transactions on 60 (4), 1480-1484,2013.

Sheneve Z Butler, Shawna M Hollen, Linyou Cao, Yi Cui, Jay A Gupta, Humberto R Gutierrez, Tony F Heinz, Seung Sae Hong, Jiaxing Huang, Ariel F Ismach, Ezekiel Johnston-Halperin, Masaru Kuno, Vladimir V Plashnitsa, Richard D Robinson, Rodney S Ruoff, Sayeef Salahuddin, Jie Shan, Li Shi, Michael G Spencer, Mauricio Terrones, Wolfgang Windl, Joshua E Goldberger, “

Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene,” ACS Nano, ACS nano 7.4 (2013): 2898-2926.

D. Qiu, K. Ashraf and S. Salahuddin, “Nature Of Magnetic Domains In An Exchange Coupled BiFeO3/CoFe Heterostructure,” Applied Physics Letters, 102 (11), 112902-112902-5, 2013.

S Salahuddin,  “Solid-state physics: A new spin on spintronics,” Nature 494 (7435), 43-44, 2013.

K Ganapathi, Y Yoon, M Lundstrom, S Salahuddin, “Ballistic–Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF Applications,” IEEE Transactions on Electron Devices, VOL. 60, NO. 3, Pg. 958, 2013.

D. Bhowmik, L. You, X. Tang, E. Chen and S Salahuddin, “Demagnetization of a fully saturated perpendicularly polarized magnet by in-plane current pulses through Spin Hall Effect,” Proceedings of Intermag/MMM, 2013.

2012

Kai Liu, Deyi Fu, Jinbo Cao, Joonki Suh, Kevin X. Wang, Chun Cheng, D. F. Ogletree, Hua Guo, Shamashis Sengupta, Asif Khan, Chun Wing Yeung, Sayeef Salahuddin, Mandar M. Deshmukh, Junqiao Wu, Dense Electron System from Gate-Controlled Surface Metal-Insulator Transition, Nano Lett., 12 (12), 6272-6277, 2012.

Supriyo Datta, Sayeef Salahuddin, and Behtash Behin-Aein, “Non volatile spin switch for Boolean and Non-Boolean Logic,” Applied Physics Letters, 101 (25), 252411-252411-5, 2012.

Y. Yoon and Sayeef Salahuddin, “Dissipative Transport in Rough Edge Graphene Nanoribbon Tunnel Transistors,” Applied Physics Letters, Appl. Phys. Lett. 101, 263501 (2012).

K Ashraf, S Salahuddin, “Phase field model of domain dynamics in micron scale, ultrathin ferroelectric films: Application for multiferroic bismuth ferrite”, Journal of Applied Physics 112 (7), 074102-074102-11, 2012.

S Salahuddin, “Negative capacitance in a ferroelectric-dielectric heterostructure for ultra low-power computing,” SPIE NanoScience+ Engineering, 846111-846111-9, 2012

Debanjan Bhowmik, Long You and Sayeef Salahuddin, “Possible Route to Low Current, High Speed, Dynamic Switching in a Perpendicular Anisotropy CoFeB-MgO Junction Using Spin Hall Effect Of Ta,” Proceedings of IEDM, 2012.

K. Ashraf, S. Smith and S. Salahuddin, “Electric Field Induced Magnetic Switching At Room Temperature: Switching Speed, Device Scaling and Switching Energy,” Proceedings of IEDM, 2012.

A.I. Khan and S. Salahuddin, “Can the negative capacitance be directly measured in an isolated ferroelectric capacitor?,” SRC TECHCON, 2012 (invited).

Asif Khan, Jinxing Zhang, Sayeef Salahuddin, “Large Piezoresponse in Tensile Strained Pb(Zr0.2Ti0.8)O3 thin films due to Spatially Mobile a-Axis Oriented Ferroelastic Nano Domains,” Oxide Electronics Workshop, 2012.

K. Ganapathi and S Salahuddin, “Zener Tunneling: Congruence Between Semi-classical and Quantum Ballistic Formalisms,” Journal of Applied Physics 111 (12), 124506-124506-4, 2012.

K Ashraf and S Salahuddin, “ Effect of anti-ferromagnet surface moment density on the hysteresis properties of exchange coupled antiferromagnet-ferromagnet systems: The case of bismuth-ferrite,” Journal of Applied Physics, 111 (10), 103904-9, 2012.

D. Datta, B. Behin-Aein, S Datta and S. Salahuddin, “Voltage Asymmetry of Spin Transfer Torque,” IEEE Transactions on Nanotechnology, pg, 261-272, Vol 11, No 2, 2012. [Cover Story]

S Chatterjee, S Salahuddin, S Kumar, S Mukhopadhyay, “Impact of Self-Heating on Reliability of a Spin-Torque-Transfer RAM Cell,” Electron Devices, IEEE Transactions on 59 (3), 791-799, 2012.

C. Yeung, A I Khan, J-Y Cheng,  S. Salahuddin and C. Hu, “Non-Hysteretic Negative Capacitance FET with Sub-30mV/dec Swing over 106X Current Range and ION of 0.3mA/μm without Strain Enhancement at 0.3V VDD,” SISPAD, 2012.

D. Bhowmik and S Salahuddin, “Pico Tesla sensitive magnetic field sensor using ferromagnet-piezoelectric bilayer ,” Proceedings of InterMag, 2012.

K. Ganapathi, Y. Yoon and S. Salahuddin, "Can Quasi-Saturation in the Output Characteristics of Short-Channel Graphene FETs be Engineered,?" Proceedings of Device Research Conference, 2012.

2011

J.T. Heron, M. Trassin, K. Ashraf, M. Gajek, Q. He, S.Y. Yang, D.E. Nikonov,Y-H. Chu,,S. Salahuddin and R. Ramesh,  “Electric-Field Induced Magnetization Reversal in a Ferromagnet-Multiferroic Heterostructure”,  Physics Review Letters, 107, 217202 (2011).

Asif Islam Khan, Debanjan Bhowmik Pu Yu, Sung Joo Kim, Xiaoqing Pan, Ramamoorthy Ramesh,and Sayeef Salahuddin, “Experimental Evidence of Ferroelectric Negative Capacitance in Nanoscale Heterostructures,” Applied Physics Letters, Appl. Phys. Lett. 99, 113501 (2011). [APL Cover and Research Highlights] [APL Top 20 downloads for Sept 2011] [Press]

Asif I. Khan*, Chun W. Yeung*, Chenming Hu & Sayeef Salahuddin, “Ferroelectric Negative Capacitance MOSFET: Capacitance Tuning & Antiferroelectric Type Operation,” IEDM, 2011.   

Youngki Yoon, Kartik Ganapathi, and Sayeef Salahuddin, “How Good Can Monolayer MoS2 Transistors Be?” Nano Lett., 2011, 11 (9), pp 3768–3773

Y. Yoon, D. E. Nikonov, and S. Salahuddin, “Role of Phonon Scattering in Graphene Nanoribbon Transistors: Nonequilibrium Green’s Function Method with Real Space Approach”, Applied Physics Letters, vol. 98, p. 203503 (2011).

Kartik Ganapathi and Sayeef Salahuddin, "Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High ON Current", IEEE Electron Dev Lett., Vol. 32, No. 5, pp. 689-691, 2011.

Y. Yoon, D. E. Nikonov, and S. Salahuddin, “Scaling Study of Graphene Transistors”, IEEE Nano, Portland, OR, Aug. 15-18, 2011.

Y. Yoon and S. Salahuddin, “Performance Assessment of Partially Unzipped Carbon Nanotube Field-Effect Transistors”, IEEE / ACM International Symposium on Nanoscale Architectures (NanoArch), San Diego, CA, Jun. 8-9, 2011.

Y. Yoon and S. Salahuddin, “Role of Optical Phonon in Graphene Nanoribbon Tunnel

Transistors: Strategy for Abrupt Switching from Material’s Point of View”, Electronic Materials Conference (EMC), Santa Barbara, CA, Jun. 22-24, 2011.

Kartik Ganapathi*, Youngki Yoon* and Sayeef Salahuddin, "Monolayer MoS2 Transistors - Ballistic Performance Limit Analysis", 69th Device Research Conference, June 2011.

Kartik Ganapathi and Sayeef Salahuddin, "Zener Tunneling: Correspondence between Quantum and Semi-Classical Formalisms", APS March Meeting, March 2011.

Kartik Ganapathi and Sayeef Salahuddin, "Atomistic Quantum Transport Simulation of InAs/In0.53Ga0.47As Vertical Heterojunction Tunneling Transistors", MRS Spring Meeting, April 2011.

Y. Yoon and S. Salahuddin, “Carbon-Based Zero-Bandgap Tunnel Transistors”, American Physical Society (APS) March Meeting, Dallas, TX, Mar. 21-25, 2011.

2010

H. Ko, K. Takei, R. Kapadia, S. Chuang, H. Fang, P. W. Leu, K. Ganapathi, E. Plis, H. S. Kim, S.-Y. Chen, M. Madsen, A. C. Ford, Y.-L. Chueh, S. Krishna, S. Salahuddin, A. Javey. “Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors”, Nature, 468, 286–289, 2010.

Youngki Yoon, Sung Hwan Kim, and Sayeef Salahuddin, “Performance analysis of carbon-based tunnel field-effect transistors for high frequency and ultralow power applications,”, Appl. Phys. Lett., 97, 233504, 2010.

G Singh-Bhalla, C Bell, J Ravichandran, W Siemons, Y Hikita, S Salahuddin, A F. Hebard, H Y. Hwang and R Ramesh,” Built-in and induced polarization across LaAlO3/SrTiO3 heterojunctions,” Nature Physics, 2010.

Y Yoon and S Salahuddin, “Barrier-free tunneling in a carbon heterojunction transistor, Appl. Phys. Lett. 97, 03310,2, 2010. [cover article]

K Ganapathi, Y Yoon, and S Salahuddin, “Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance,” Appl. Phys. Lett. 97, 033504 ,2010.

B Behin-Aein, D Datta, S. Salahuddin & S Datta, “Proposal for an all-spin logic device with built-in memory,” Nature Nanotechnology 5, 266 – 270, 2010.

Y. Yoon and S Salahuddin,  “Inverse temperature dependence of subthreshold slope in graphene nanoribbon tunneling transistor,” Appl. Phys. Lett. 96, 013510 (2010).

S. Chatterjee, S. Salahuddin, and S. Mukhopadhyay, “Dual Source-Line-Bias Scheme to Improve Read Margin and Sensing Accuracy of STTRAM in sub-90nm Nodes,”  IEEE Transactions on Circuits and Systems, 2010. 

D. Datta, B. Behin-Aein, S. Salahuddin, S. Datta, “Quantitative Model for TMR and Spin-Transfer Torque in MTJ Devices”,  Technical Digest of IEDM, 2010.

K. Ganapathi, Y. Yoon and S. Salahuddin, “Comparative analysis of the performance of InAs lateral and vertical band-to-band tunneling transistors,” Proceedings of Device Research Conference, pgs, 57-58, 2010.

Y.Yoon and S. Salahuddin, “Structure, channel dimension and doping effects in carbon heterojunction transistors towards barrier-free band-to-band tunneling,” Proceedings of Device Research Conference, 2010.

2009

J Li, P . Dai, K. Goel, S. Salahuddin, K. Roy,  “Design Paradigm for Robust Spin-Torque Transfer Magnetic RAM (STT MRAM) from Circuit /Architecture Perspective,” IEEE Transactions on VLSI, 2009,Digital Object Identifier 10.1109/TVLSI.2009.2017903 .

B Behin-Aein, S. Salahuddin and S Datta, “Switching Energy of Ferromagnetic Logic Bits , IEEE Transactions On Nanotechnology, Vol: 8, Issue: 4, pp:505-512, 2009.

2008

S. Salahuddin and S. Datta, `Use of negative capacitance to provide a sub-threshold     slope lower than 60 mV/decade,` Nanoletters, vol. 8, No. 2, 2008.  [cover article]

        Related article: `Field-effect transistors: Shrinking the voltage,` Research Highlights,         Nature Nanotechnology, doi: 10.1038/nnano.2007.450

        Related article: `Nanoelectronics: Negative capacitance to the rescue? ,` Victor V. Zhirnov & Ralph K. Cavin, Nature Nanotechnology, 3, 77 - 78 (2008).

S. Salahuddin and S. Datta,” Can the subthreshold swing in a classical FET be lowered below 60 mV/decade?”, Proceedings of IEEE Electron Devices Meeting (IEDM), 2008.

J. Li,  Haixin Liu , S.   Salahuddin  and Roy, K., “Variation-tolerant Spin-Torque Transfer (STT) MRAM array for yield enhancement,”  Custom Integrated Circuits Conference, 2008. CICC21-24, pp:193-196, Sept. 2008.

J. Li, C. Augustine, S. Salahuddin, and K. Roy, "Modeling of failure probability and statistical design of Spin-Torque Transfer Magnetic Random Access Memory (STT MRAM) array for yield enhancement," in Proc. 45th Design Automation Conf. (DAC 2008), pp. 278-283.

Prior to 2008

S. Salahuddin and S. Datta, `Interacting systems for self correcting low power switching,` Applied Physics Letters, vol. 90, 093503, 2007.

S. Salahuddin, D. Datta, P. Srivastava and S. Datta, `Quantum transport simulation of Spin Torque Devices: Design Treadeoffs and Torque efficiency,` Proceedings of  International Electron Devices Meeting (IEDM), December, 2007.

S. Salahuddin and S. Datta , `Simulation of Spin Torque Devices with Inelastic Spin flip Scattering, ` Conference Digest, Device Research Conference (DRC), 2007.

S. Salahuddin and S. Datta, `Self-Consistent Simulation of Hybrid Semiconductor Devices,` International Electron Devices Meeting (IEDM), December, 2006.

S. Salahuddin and S. Datta, `An All Electrical Spin Detector,` Sixth IEEE Conference on Nanotechnology (IEEE Nano), July, 2006.

S. Salahuddin, P. Srivastava and S. Datta ,`Integrating Spintronics with Conventional Semiconductor Devices through Exchange Interaction,` Conference Digest, Device Research Conference (DRC), pg. 233, 2006.

S. Salahuddin and S. Datta , `Self-Consistent Simulation of Quantum Transport and Magnetization Dynamics in Spin-Torque Based Devices,` Applied Physics Letters, vol. 89, no. 15, 153504,2006.

S. Salahuddin and S. Datta, `Electrical Detection of Spin Excitations,` Physical Review B, Rapid Communications, vil. 73, 081301, 2006.

M.S. Hasan., S. Salahuddin, M. A. Alam, and M. Vaidyanathan , `High-frequency performance projections for ballistic carbon-nanotube transistors,` IEEE Transactions on Nanotechnology, vol. 5, no. 1, pg. 14-22, 2006.

S. Salahuddin, M. Lundstrom and S. Datta, `Transport Effects on Signal Propagation in Quantum Wires.` IEEE Transactions on Electron Devices, Vol. 52, No.8, pg.1734, 2005.

M.K.Hasan, S. Salahuddin and M.R. Khan, `A modified a priori SNR for speech enhancement using spectral subtraction rules,`IEEE Signal Processing Letters, v 11, n 4,  p 450-3, 2004.

M.K.Hasan, S. Salahuddin and M.R. Khan, `Reducing signal-bias from MAD estimated noise level fro DCT speech enhancement,`Signal Processing, v 84, n 1, p 151-62, 2004.

S. Salahuddin, , S.Z.A.Islam, , M.K.Hasan.  and  M.R. Khan, `A new look on the soft thresholding for DCT speech enhancement,` Electronic Letters , pg.1605~1606, Vol. 38, No. 24, 2002.

S. Salahuddin, S.Z.A.Islam, , M.K.Hasan. and M.R. Khan, `Speech enhancement by envelope restoration and soft thresholding on the dct domain,`,Proceedings of ICECE, 2002.

School of Electrical Engineering and Computer Sciences, University of California, Berkeley