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Pragya Kushwaha (IEEE Senior Member)

INSPIRE Faculty and Senior Scientific Officer-Centre for AIoT and Applications, Indian Institute of Technology Jodhpur (Oct 2023 - Present)

Scientist SD, Space Application Centre (ISRO), Ahmedabad (July 2020 - Oct 2023)

Postdoctoral Researcher, University of California Berkeley, USA (Oct 2016 - Feb 2020)

Ph.D., Indian Institute of Technology Kanpur, India (Jan 2012-Sept 2016)

M.Tech, Panjab University Chandigarh, India (July 2009-July 2011)

B.Tech, Uttar Pradesh Technical University, India (July 2005-July 2009)

Research Interests:

Semiconductor Device Characterization and Simulation
Industry Standard Compact Modeling for emerging CMOS technologies
Device-circuit co-optimization
Cryogenic CMOS Modeling for quantum computation applications
GaN HEMT Characterization and Modeling for RF communication
Single photon avalanche Photodiodes for quantum communication application

Recent Updates of Year 2024:

GaN HEMT Compact Modeling Work accepted in IEEE Transactions on Electron Devices, Nov 2024

Raghvendra Dangi , Ahtisham Ul Haq Pampori , Praveen Pal , Mohammad Sajid Nazir , Pragya Kushwaha, Yogesh Chauhan A Broadband and Transient-Accurate AlGaN/GaN HEMT SPICE Model for X-band RF Applications.

Article published in IEEE Electron Devices Magazine

P. Kushwaha, "Electronics: Our Silent Partners in Progress [Women in Electron Devices]," in IEEE Electron Devices Magazine, vol. 2, no. 3, pp. 60-C3, Sept. 2024, doi: 10.1109/MED.2024.3448908.

A novel Front-End-Of-Line (FEOL) design approach that significantly improves the RF performance of gate-all-around nanosheet FET at the critical 3nm technology node

Y. Machhiwar, P. Kushwaha, H. Agarwal, “Optimization of Source/Drain-epi Region Height in GAA Nanosheet FET for RF Applications”, 2024 IEEE Device Research Conference, June 2024.

Research Projects Experience:

Fabrication and modeling of photodiodes for quantum communication applications (Lead Technology Development Project as PI, 4 Cr, SAC Ahmedabad)
Characterization, Modeling and Simulation of GaN HEMT PDK development for RF applications (Lead Space Technology Cell Project as Subject expert, SAC Ahmedabad)
Compact modeling of sub-5nm CMOS emerging devices (Lead INSPIRE Project as PI, 35 Lakhs)
Cryogenic temperature physics and modelling of semiconductor devices (UC Berkeley)

Ongoing and Submitted Projects:

Sub-5nm Semiconductor Device Investigation and Compact Model Development: DST INSPIRE (Ongoing, PI)
Silicon-ITO Double Heterojunction Single-Photon Detectors for Secure Quantum Communication at

1550nm: SERB Power Research Grant, Feb 2024 (Submitted, PI)

Design and Fabrication of High-Precision Photodiode for synchronization of the devices in Cognitive

Experiments: DST Cognitive Science Research Initiative (CSRI), May 2024 (Submitted, PI)

Design and Fabrication of Beta-Ga2O3 based Solar-Blind Photodetector: DST Call for Proposals on Advanced Material under National Program for Nano Science and Technology (NPNST), Sept. 2024 (Submitted, Co-PI)

Awards and Recognition:

2024: Member Secretary: IEEE Smart Village- South Asia Working Group (ISV-SAWG)
2024: Organizing member of IEEE Summer School, Student Branch IIT Jodhpur
2021-Present: Committee Member, IEEE Women in Electron Devices (WiEDS)
2021: Prestigious Ramanujan Fellowship Award (not availed)
2020-2022: Committee Member, IEEE EDS TC on Compact Modeling
2020-2021: Committee Member, IEEE Young Professional Committee Member
2019: IEEE EDS Early Career Award Link

Book Published:

"Industry Standard FDSOI Compact Model BSIM-IMG for IC Design", Link

Description: This book helps readers to develop an understanding of a FDSOI device physics and its modeling. It explains questions like how FDSOI enables further scaling and why it offers unique possibilities in circuits.

Chapter 8: High-Frequency and Noise Models in BSIM-IMG (IEEE MTT 2016, IEEE MTT 2017, IEEE JEDS 2016)
Chapter 7: Testing BSIM-IMG Model Quality (IEEE INDICON 2014, IEEE EDSSC 2016)
Chapter 6:Parameter Extraction With BSIM-IMG Compact Model (Developed methodology as model Co developer, see BSIM-IMG Manual-Link)
Chapter 4: Leakage Current and Thermal Effects (IEEE TED 2017, Microelectronics Journal 2016)
Chapter 3: Channel Current Model With Real Device Effects in BSIM-IMG (SSE 2015)
Chapter 2: Core Model for Independent Multigate MOSFETs (IEEE INDICON 2014)