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52.
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53.
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54.
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64.
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65. "Towards
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JMOS
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67. "Optical
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68. "Low
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75. "Channeling
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76. "CMOS
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77. "Two
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78. "Very
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79. "Low-Energy
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80. "Threshold
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1982) (with R. Kazerounian).
81. "Composition,
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82. "Isolation
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83. "Alignment
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84. "CODMOS
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A Depletion Load Technology with Fixed Oxide
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1984) (with R. Kazerounian).
85. "Low
Pressure
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Thin Gate Dielectric for MOSFET's," J.
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86. "Contrast
Studies
in High-Performance Projection
Optics," IEEE Trans. Elec Devices, pp.
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87. "Characterization
and
Modeling of a Resist With Built-In
Induction Effect," Proceedings,
Kodak Microelectronics Seminar, Interface
82, San Diego, pp. 112-117 (October 1983)
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88. "Anodic
Si3N4 Grown in a New
Plasma Reactor," Digest, Technical
Proceedings, 1983 Symposium on VLSI
Technology, Maui, pp. 88-89 (with S.S.
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89. "Citation
Classic
- Interface States in Abrupt Semiconductor
Heterojunctions," Current
Contents, p. 22 (November 14,
1983) (with A.G. Milnes).
90. "A
JMOS
Transistor Fabricated with 100A Low
Pressure Nitrided-Oxide
Gate
Dielectric," IEEE Trans Elec Dev., pp.
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R. Grinolds).
91. Process
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Antoniadis, R.W. Dutton, and D. Antognetti), Martinus Nijhoff Publishers
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92. "Composition
and
Electrical Properties of Nitrided-Oxide and
Re-Oxidized
Nitrided-Oxide," Silicon
Nitride
Thin Insulating Films, (Eds. V.J. Kapoor and H.J.
Stein), Electrochemical Society, Pennington
NJ (1983) (with S.S. Wong, S.H. Kwan and
H.R. Grinolds).
93. "Low
Energy
Implantation of Nitrogen and Ammonia into
Silicon," Silicon Nitride Thin
Insulating Films, (Eds. V.J. Kapoor and H.J.
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94. "Low
Energy
Implantation of Nitrogen and Ammonia into
Silicon," Springer Series in Electrophysics, Volume
II: Ion
Implantation: Equipment and
Techniques, (Eds. H. Ryssel
and H. Glawischnig),
Springer-Verlag
Berlin Heidelberg, Germany, pp. 465-472
(1983) (with T.Y. Chiu and C. Hovland).
95. "1
um
Lithography, Optical and
Resist-Limited Control," Session I,
Patterning - SEMICON/Europa
Semiconductor Proc. & Equip.
Symposium, Zurich (March 13-15, 1984) (with
I.S. Hsu and D.J. Kim).
96. "A
Multi-Wafer
Plasma System for Anodic Nitridation and
Oxidation," Electron
Device Letters, pp. 175-177 (May
1984) (with S.S. Wong).
97. "Determining
Specific
Contact Resistivity from Contact End
Resistance Measurements," IEEE
Electron Device Letters, Vol. EDL-5, No. 5,
pp. 178-180 (May 1984) (with J.G.J. Chern).
98. "Anodic
Nitridation of
Silicon-Dioxide," Electronic Materials
Conference (June 15, 1984) (with S.S.
Wong).
99. Electrical
Engineering:
An Introduction, (book), CBS College
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Schwarz).
100. "Shallow
Boron
Junctions Implanted in Silicon Through
a Surface Oxide," Electron
Device Letters, Vol. EDL-5, pp. 299-301 (Aug.
1984) (with T.M. Liu).
101. "Development
of Positive Photoresist," IEEE
Transactions on Elect. Devices, Vol. ED-31,
pp. 11730-1735 (Dec. 1984) (with D.J.
Kim, and A.R. Neureuther).
102. "Contact
Electromigration
Induced Leakage Failure in Al/N+ SI and
P+SI Contacts," 2 The
Electrochemical Society, Symposium on Electromigration of
Metals, October 7-12 (1984) (with J. Chern and N.
Cheung).
103. "The
Material
Properties of Silicon Nitride Formed by
Low Energy Nitrogen
Ion-Implantation," J. Electrochemical
Society, Vol
131, pp. 2110-2115 (Sept. 1984) (with T. Chiu
and C. Hovland).
104. "MOS
Isolation
Technology," 1985 European Solid
State Device Conference Lille (Sept. 1985) (with
Y. Shacham-Diamand,
P.L. Pai, K.
Young and P. Sutardja).
105. "Planarization with
Spin-on-Glass/LPCVD Composite Films,"
3 Digest of Papers, 1985 International
Symposium on VLSI Technology, Uobe, Japan, pp. 52-53
(May 14-16, 1985) (with F. Dupuis and Y. Shacham-Diamand).
106. "Anodic
Nitridation of
Silicon and Silicon Dioxide," IEEE
Transactions on Electron Devices, Vol.
ED-32, No. 5, pp. 978-982 (May 1985) (with S.
Simon Wong).
107. "Resist
Modeling
and Profile Simulation," Solid State
Technology, pp. 139-144 (May 1985) (with
A.R. Neureuther).
108. "Plasma-Enhanced
Nitridation of SiO2--Bias
Effects," Proceedings of
Technical Papers, 1985 International
Symposium on VLSI Technology, Systems
and Applications, Taipei, Taiwan, pp.
291-294 (May 8-10, 1985) (with K. Young).
109. "Proximity
Effects
and Printability of Defects in GexSe1-
x Resist," J. Vac. Sci.
Technology, Vol. 3, No 1, pp. 310-313
(January/February, 1985) (with W. Leung
and A.R. Neureuther).
110. "The
Electrical
Properties of Hg-sensitized PHOTOX
Deposited at 80 C," 1985 Electronics
Materials Conference, Boulder, Colorado
(June 19-21, 1985) (with T. Chuh, Y. Shacham-Diamand
and Pei-Lin Pai).
111. "The
Effect
of Hydrogen on Boron Diffusion in SiO2," 1985
Electronics
Materials Conference, Boulder,
Colorado (June 19-21, 1985) (with Y. Shacham-Diamand).
112. "Simulation
of Lithography," Chapter
3 in Process and Device
Modeling, W. L. Engl,
Editor, Elsevier Science Publishers B.V. (1986)
(with A.R. Neureuther).
113. "Contact-Electromigration Induced
Leakage Failure in Aluminum-Silicon to Silcon
Contacts," IEEE Trans. Elec.
Devices, Vol. ED-32, No. 7, (July 1985)
(with J. Chern and
N. Cheung).
114. "High
Resolution
Additive Thin Film Patterning,"
2 Interface 85, Kodak Microelectronics
Seminar, San Diego, CA (November,
1985) (with P.L. Pai
and Y. Shacham-Diamand).
115. "The
Advanced
Berkeley CMOS Process," VLSI Workshop
on Test Structures, Long Beach, CA
(February 1986) (with Y. Shacham-Diamand and A.R.
Neureuther).
116. "Inorganic
Resist
Phenomena and Their Applications to
Projection Lithography," IEEE Trans.
on Electron Devices, Vol. ED-33, No. 2
(February 1986) (with W. Leung and A.R.
Neureuther).
117. "The
Properties
of Sub-100 A Thin-gate Oxide-Nitride
Stacked Films," VLSI
Symposium, San Diego, CA (May 1986) (with
K. Young).
118. "Two-Dimensional Simulation
of
Glass Reflow and Silicon
Oxidation," VLSI Symposium, San
Diego, CA (May 1986) (with P. Sutardja and Y. Shacham-Diamand).
119. "A
new 10:1
Photomask Reduction
Camera," SPIE Symposium on
Microlithography, Santa Clara, CA (March
1986) (with K. Voros
and P. Sutardja).
120. "The
Effect of
Hydrogen on Boron Diffusion in SiO2," Transactions
of
the Metallurgical Society of AIME (1986)
(with Y. Shacham-Diamand).
121. "A
High
Resolution Lift-Off Technology for
VLSI Interconnections," 1986
Proceedings Third International IEEE
VLSI Multilevel Interconnection
Conference, Santa Clara, CA (June 9-10,
1986) (with P.L. Pai
and Y. Shacham-Diamand).
122. "Electromigration in
Al/SI Contacts--Induced
Open-Circuit Failure," IEEE
Trans on Electron Devices, Vol. ED-33, No.
9 (September 1986) (with J.G.J. Chern and N.
Cheung).
123. "Electrical Properties
of
Hg-Sensitized 'Photox'
Oxide Layers Deposited at
80C", Solid-State
Electronics, Vol. 30, No. 2, pp. 227-233
(1987) (with Y. Shacham-Diamand
and T. Chuh).
124. "The
Use
of Contrast Enhancement Layers to Improve
the Effective Contrast of
Positive Photoresist," IEEE
Transactions of Electron Devices, Vol.
ED-34, No. 2 (February 1987).
125. "Get
Submicrometer
Resolution with Optical Lithography,"
Research & Development, pp.
92-95, (January 1987) (with James A. Schoeffel).
126. "Modeling
of
Stress-Effects in Silicon Oxidation including
the Non-Linear Viscosity of
Oxide", IEDM Digest of Technical
Papers, pp. 264-267, (December 1987) (with
Pantas Sutardja, D.B.
Kao).
127. "Charge
Transport
and Trapping Model for Scaled Nitride-Oxide
Stacked Films", Applied Surface
Science 30, North-Holland, Amsterdam, pp.
171-179 (1987) (with K.K. Young, C. Hu).
128. "Silicon
Epitaxy
in an LPCVD Furnace", IEEE VLSI
International Technical Digest, pp. 79-80,
VLSI Symposium, San Diego (May 1988) (with Carl
Galewski).
129. "A
Lift-off
Process Using Edge Detection
(LOPED)", IEEE Transactions on
Semiconductor Manufacturing", Vol. 1,
Number 1, pp. 3-9 (Feb. 1988) (with Pei-Lin Pai).
130. "High-Resolution
Imaging
Using Focused-Image Holography with
Wave-Front Conjugation", Proceedings
of SPIE - The International Society of Optical
Engineering, Vol. 922, pp. 18-25 (March
1988) with Ginetto
Addiego).
131. "A
Compact
Optical Imaging System for Resist Process and
Lithography Research", Proceedings
of SPIE, Vol. 92a, pp. 471-475 (March
1988) (with John H. Bruning).
132. "A
Framework
for Multilevel Interconnection
Technology", VLSI Multilevel
Interconnection Conference", pp. 108-114
(June 1988) (with Pei-Lin
Pai, Chiu H.
Ting).
133. "Ion
Transit
Through Capacitively
Coupled Ar Sheaths: Ion
Current and Energy
Distribution", Journal of Applied
Physics, pp. 1367-1371, (February 1988)
(with W.M. Greene, D.W. Hess).
134. "Comparison
of
Low-Pressure and Plasma-Enhanced Chemical Vapor
Deposited Tungsten-Thin
Films", Applied Physics
Letters, pp. 113-115, (Mar/Apr 1988) (with
W.M. Greene, D.W. Hess)
135. "Test
Patterns
and Simulation Software for Characterization of
Optical Projection
Printing", Proceedings of KTI
Microelectronics Seminar pp. 113-122,
(November 1988) (with A.R. Neureuther, B. Huynh,
K.K.H. Toh, R.
Ferguson, W.E. Haller and D. Sutija).
136. "Simulation
of
Back-Of-The-Line Processes with
SAMPLE", Proceedings of KTI
Microelectronics Seminar pp. 261-281,
(November 1988) (with Don E. Lyons, Stephen F.
Meier, LeRoy Winemberg, A.R.
Neureuther).
137. "Ion-bombardment-enhanced
Plasma
Etching of Tungsten with NF3O2," J.
Vac. Sci., Technol. B6 pp. 1570-1572,
Sep/Oct 1988, (with S.M. Greene and D.W.
Hess).
138. "Plasma-
and
Gas-surface Interactions During the Chemical
Vapor Deposition of Tungsten from H2WF6," Journal
of Applied Physcis, 64
(9), pp. 4696-4703, November 1988, (with
W.M. Greene, and D.W. Hess).
139. "Ion
Current,
Energy Distribution, and Radical Species
Detection in RF Plasmas by Cylindrical
Mirror Analyzer Quadrupole
Mass Spectroscopy", Materials
Research Society Symposium
Proceedings, vol. 117, pp. 61-65,
1988.
140. "Low
Temperature
Selective Epitaxy in a Hot-Wall
Reactor", Proceedings of
SEMICON/EUROPA, pp. 67-77, (March
1989) (with Carl Galewski).
141. "Automated
Resist
Modeling and Simulation-Calibrated Test Patterns
for Characterization of Optical Projection
Printing", Proceedings of SRC Techcon '88 pp.
304-307, 1988 (with A.R. Neureuther, B. Huynh,
K.K.H. Toh, W.R.
Bell, C. Zee, G. Misium,
R. Ferguson, W.E. Haller and D. Sutija). Oct. 12,
1988.
142. "The
Diffusion
of Ion-implanted Arsenic in thermally Grown SiO2" Journal
of
Electronic Materials, Jan 1989. (with Yosi Shacham-Diamand and Reza
Kazerounian)
143. "Deep-UV
Photolithography
with a Small-Field, 0.6 N.A. Microstepper", SPIE
Optical/Laser Microlithography II Proceedings,
vol. 1088, pp. 471-475, 1989, (with C.A.
Spence, W.N. Partlo,
J.H. Bruning, D.A.
Markle and R. Hsu.)
144. "Diffraction
Limited
Imaging Using Incoherently Illuminated
Holographic Masks", SPIE
Optical/Laser Microlithography II
Proceedings, vol. 1088, pp. 296-303, March
1989 (with G. Addiego)
145, "Effects
of
Line Narrowing and Collimation on Excimer
Radiation at 248 nm", SPIE
Optical/Laser Microlithography II, vol.
1088, pp. 448-461, March 1989, (with W.N. Partlo, C.A.
Spence).
146. "Characterization
of
Deep-UV Pellicles for 248 nm Excimer
Exposure", Proceedings of the KTI
Microelectronics Seminar, pp. 107-121, San
Diego, Nov. 6-7, 1989 (with W.N. Partlo, S. Flynn).
147. "Process
Simulation
and Experiment for RC-Parasitics
in
Multilevel Metallization", IEEE
VLSI Multilevel Interconnect Conference
Proceedings, , pp. 299-305, Santa Clara,
June 11-14, 1989, (with E.W. Scheckler, D.E. Lyons,
and A.R. Neureuther).
148. "An
Experimental
Characterization System for Deep Ultra-Violet
(UV) Photoresists", SPIE, Advances in
Resist Technology and Processing VI, vol.
1086, pp. 282-288, 1989, (with D.M. Drako, W.N. Partlo and A.R.
Neureuther).
149. "Characterization
and
Modeling of Materials for Photolithography
Simulation", Solid State Electronics,
vol. 33, no. 6, pp. 625-638, June
1990. (with C.A. Spence, R.A. Ferguson, and
A.R. Neureuther).
150. "Exploratory
Test
Structures for Image Evaluation in Optical
Projection Printing", SPIE
Optical/Laser Microlithography II
Proceedings, vol. 1088, pp. 83-87 March
1989, (with A.R. Neureuther, K.K.H. Toh, J.E.
Fleischman, D. Yu, G. Misium,
B. Huynh, and B. Uathavikul).
151. "Characterization
of
UV Resist for 248nm
Lithography", SPIE Proceedings,
Advances in Resist Technology and Processing VI,
vol. 1086, pp. 502-506, 1989, (with Yosi Y. Shacham-Diamand, and
W.N. Partlo).
152. "Characterization
Methods
for Excimer Exposure of Deep-UV
Pellicles", SPIE 1990 Symposium on
Microlithography, March 1990, (with W.N. Partlo).
153. "Modeling
of
Stress Effects in Silicon
Oxidation", IEEE Transactions on
Electron Devices, vol. 36, no. 11, pp.
2415-2421, November 1989, (with P. Sutardja)
154. "Dynamic
Measurements
of Film Thickness Over Local Topography in
Spin Coating", 1990
International Symposium on the Mechanics of
Thin-Film Coating (AlChE,
Spring National Meeting, Orlando, FL, March
1990, & Applied Physics Letters,
June 1990 (with L.M. Manske
and D.B. Graves).
155. "Silicon
Wafer
Preparation for Low-Temperature Selective Epitaxial
Growth", IEEE Transactions on
Semiconductor Manufacturing, vol. 3, no. 3,
pp. 93-98, August 1990, (with C. Galewski and J.C.
Lou.)
156. "Construction
and
Characterization of a High-NA Deep-UV
Projection Lithography System",
SRC TECHCON '90 Technical Program's
Extended Abstract Volume, pp.
171-174, October 16-18, 1990, San Jose,
CA, (with C. A. Spence, R. Hsu and A. Pfau).
157. "A
General
Approach to the Modeling and Simulation of
Advanced Deep-UV Resists", SRC
TECHCON '90 Technical Program's Extended
Abstract Volume, pp. 175-178, October
16-18, 1990, San Jose, CA, (with R.A.
Ferguson, C.A. Spence, J.M. Hutchinson, and A.R.
Neureuther).
158. Carl
Galewski, Jen-Chung
Lou, and William G. Oldham, "Silicon Wafer
Preparation for Low-Temperature Selective Epitaxial
Growth", IEEE Trans. on Semiconductor
Manufacturing, Vol
3, No 3, pp93-98, August 1990
159. Jen-Chung
Lou,
Carl Galewski, and
William G. Oldham, "Dichlorsilane
effects on low-temperature selective silicon epitaxy", Appl. Phys. Lett, 58, pp59-61, Jan,
1991
160. William
N.
Partlo and William
G. Oldham, "Transmission Measurements of
Pellicles for Deep-UV
Lithography" IEEE Trans. on
Semiconductor Manufacturing, Vol 4, no. 2, pp128-133,
May 1991
161. William
G.
Oldham, Christopher A. Spence, Richard Hsu, and
Anton Pfau, "Construction
and
Characterization of a High-NA Deep-UV
Projection Lithography
System," SRC TECHCON '90 San Jose,
CA pp 171-174, Extended Abstracts Volume,
Oct 16, 1990.
162. Richard
A.
Ferguson, Chris A. Spence, John M. Hutchinson,
Andrew R. Neureuther, and William G.
Oldham, "A General Approach to the Modeling
and Simulation of Advanced Deep-UV
Resists", SRC TECHCON '90 San Jose,
CA pp 175-178, Extended Abstracts Volume,
Oct 16, 1990.
163. A.K.Pfau, W. G. Oldham,
A. R. Neureuther, "Exploration of
Fabrication Techniques for Phase-Shifting
Masks" PROCEEDINGS SPIE 1991
SYMPOSIUM ON MICROLITHOGRAPHY, San Jose
CA, March 1991
164. Jen-Chung
Lou,
William G. Oldham, Harry Kawoyoshi,
and Peiching
Ling, "The Selective Epitaxy of Silicon at
Low Temperatures," 1991 Spring
Meeting Material Research
Society, Pittsburgh, May 1, 1991
165. William
N.
Partlo, and William
G. Oldham, "Reducing coherence in a 5th
harmonic YAG source (213nm) for use in
microlithography" 35th Internation Symposium on
Electron, Ion, and Photon Beams, Seattle
WA, May 28, 1991.
166. J.
E.
Moon, C. Galewski,
T. Garfinkel, M.
Wong, W. G. Oldham, P. K. Ko, and C. Hu "A Deep-Submicrometer Raised
Source/Drain LDD Structure Fabricated Using
Hot-Wall Epitaxy" 1991 International
Symposium on VLSI Technology, Systems, and
Applications, Proceedings, pp117-121, May
22-24, 1991
167. A.
K.
Pfau, W. G. Oldham,
and A. R. Neureuther, "Effects of Sizing,
Alignment, and Defects on Projection
Printing with Phase-Shifting Masks",
Digest, 1991 Symposium on VLSI
Technology, pp 93-94, Oiso
Japan, May 1991
168. Y.
Shacham-Diamand, A.
Dedhia, D. Hoffstetter, and W. G.
Oldham "Reliability of Copper Metallization
on Silicon-Dioxide", Proceedings IEEE
VLSI Multilevel Interconnection
Conference, pp 109-115, June 1991
169. Jen-Cheung
Lou,
William G. Oldham, Harry Kawayoshi
and Peiching
Ling, "Process and Defect Studies in
Low-Temperature Selective Epitaxial
Silicon", 1991 Electronic Material
Conference, Boulder Colorado, June,
1991.
170. A.
R.
Neureuther, and W. G. Oldham "Resist
Characterization and Lithography
Simulation" (invited
presentation) Workshop on Soft X-Ray
and Projection Lithography, Monterey, Ca
April 1991
171. W.
N.
Partlo and W. G.
Oldham, "Reducing Coherence in a 5th
Harmonic YAG Source (213nm) for Use in
Microlithography," J. Vac. Sci. Tech.
B, pp3126-3131, Nov 1991.
172. W.
N.
Partlo and W. G.
Oldham, "213nm Lithography," presented at
the IEEE Workshop on Advanced Lithography,
Hawaii, August 1991,
173. A.
K.
Pfau, R. Hsu, W. G.
Oldham, "A Two-Dimensional High-Resolution
Stepper Image
Monitor", Proceedings, SPIE Symposium
on Optical/Laser Microlithography V, SPIE
VOL 1674, pp 182-192, 1992.
174. J.
C.
Lou, W. G. Oldham, H. Kawayoshi,
and P. C. Ling, "The Surface Morphology of
Selectively Grown Epitaxial
Silicon", J. Appl.
Phys. V70, pp685-692, July 15, 1991.
175. C.
Galewski and W. G.
Oldham "A Hot-Wall Low-Pressure Reactor for
Selective Silicon Epitaxy - Reactor Design
and Experimental Results", J. Electrochem. Soc.
V139, pp 543-548, Feb 1992.
176. J.
C.
Lou, W. G. Oldham, H. Kawayoshi,
and P. C. Ling, "Plasma Etch Effects on
Low-Temperature Selective Epitaxial
Growth of Silicon" J. Appl. Phys.
V71, pp3225-3230, April 1992.
177. J.
C.
Lou, W. G. Oldham, H. Kawayoshi,
and P. C. Ling, "Fluorine Ion-Induced
Enhancement of Oxide Removal Prior to
Silicon Epitaxial
Growth", Appl.
Phys. Lett.
V60, pp1232-1234, Mar 1992.
178.
A.K.
Pfau, W. G. Oldham,
and A. R. Neureuther, "Exploration
of Fabrication Techniques for Phase
Shifting Masks", SPIE VOL
1463, pp 124-134, 1991
179. A.
S.
Weng, R. Gronsky, J. C. Lou and
W. G. Oldham, "SOI Interface Structures in
Selective Epitaxial
Growth", Proceedings, 1992 Materials
Research Society Symposium, Vol 238, pp707-712,
1992.
180. C.
Galewski and W. G.
Oldham, "Modeling of a High Throuput Hot-Wall
Reactor for Selective Epitaxial
Growth of Silicon", IEEE Trans.
Semicond.
Manufacturing, V5, pp169-179, August
1992.
181. A.K.
Pfau, W.N. Partlo, R. Hsu, and W.
G. Oldham, "Quartz inhomogeneity
effects in diffraction-limited deep
ultraviolet imaging", Applied
Optics, vol. 31, pp 6658-61, Nov.
1992.
182. J.
Hutchinson,
K. Kalpakjian, R.
Schenker, W. G. Oldham, "Evaluation of
Liquid Silylated
Resists for 213nm
Exposure" Proceedings SPIE Advances
in Resist Technology and Processing X, Vol 1925 pp414-425,
March 1993.
183. C.H.
Fields,
W.G. Oldham, and R.J. Bojko "The
Use
of Amorphous Silicon for Deep UV
Masks" Proceedings SPIE Optical/Laser
Microlithography, Vol
1927 pp727-735, March 1993.
184. W.
N.
Partlo and W. G.
Oldham, "A Diffuser speckle model:
application to multiple moving
diffusers", Applied Optics, vol 32, pp 3009-14,
June 1993.
185. J.
M.
Hutchinson, W. N. Partlo,
R. Hsu, and W. G. Oldham, "213 nm
lithography", Microelectronic
Engineering, vol. 21, pp 15-18, April 1993
(Microcircuit Engineering 92.
International Conference on
Microfabrication, Erlangen,
Germany, 21-24 Sept. 1992).
186. Y.
Shacham-Diamand, A.
Dedhia, D. Hoffstetter, and W. G.
Oldham "Copper transport in thermal SiO2", Journal
of the Electrochemical Society,
vol.140, pp2427-32, August 1993.
187. C.H.
Fields,
W.N. Partlo, and
W.G. Oldham, "Aerial Image Measurement on a
Commercial Stepper", TECHCON'93
Extended Abstract Vol, pp78-80,
Sept
1993
188. W.
N.
Partlo, C. H.
Fields, and W. G. Oldham "Direct Aerial
Image Measurement as a method of testing
high numerical aperture microlithographic
lenses", "J. Vac.
Sci. and Technol. Vol B11, pp
2686-2691, Nov 1993.
189. Kent
M.
Kalpakjian, M. A. Lieberman,and W. G.
Oldham, "High frequency reactive ion
etching of silylated
photoresist", J. Vac. Sci. and Technol. Vol B12 pp
1351-1361, May 1994.
190. R.
Schenker,
P. Schermerhorn,
and W. G. Oldham, "Deep-UV Damage to Fused
Silica", J. Vac.
Science and Technology B, Vol
12 pp 3275-79, 1994, paper given
at 38th International Electron, Ion, Photon
Beams Conference, New Orleans LA, June
1994.
191. G.
Wallraff, J.
Hutchinson, W. Hinsberg,
F. Houle, P.
Seidel, R. Johnson, and W. G.
Oldham, "Thermal and Acid-Catalyzed Deprotection Kinetics in
Deep UV Resist Materials", J. Vac. Science and
Technology B , Vol
12, pp 3857-62, 1994, paper given at 38th
International Electron, Ion, Photon Beams
Conference, New Orleans LA, June
1994.
192. Y.
C.
Shih, J. B. Liu, W. G. Oldham, and R. Gronsky "Epitaxial lateral
overgrowth of silicon by chemical vapor
deposition on ultrathin
oxide layers" Appl
Phys Lett. Vol 65, pp
1142-1144, August 1994.
193. Y.
C.
Shih, J. C. Lou, and W. G. Oldham, "Seam
line defects in silicon-on-insulator by merged epitaxial lateral
overgrowth, Appl.
Phys. Lett. Vol
65, pp1638-1640, Sept 1994.
194. R.
Schenker,
L. Eichner, H. Vaidya, W.G. Oldham, S Vaidya, "Comparison
of UV-damage properties for various fused silica
types", Symposium on Optical
Materials for High Power Lasers, Denver,
Oct. 1994.
195. Y.
C.
Shih, G. G. Zang,
C. M. Hu, and W. G.
Oldham, "Thin Dielectric Degradation during
silicon Selective Epitaxial
Growth Process, Appl. Phys. Lett, V67, pp
2040-42, Oct, 1995
196. Bokor, J.; Neureuther, A.R.; Oldham, W.G. Advanced lithography for ULSI. IEEE Circuits and Devices Magazine, vol.12, (no.1):11-15, Jan. 1996.
197. Hutchinson, J.M.; Wallraff, G.M.; Hinsberg, W.D.; Opitz, J.; and others "Characterization and modeling of a chemically amplified resist for ArF lithography."(Advances in Resist Technology and Processing XII, Santa Clara, CA, USA, 20-22 Feb. 1995). Proceedings of the SPIE - The International Society for Optical Engineering, 1995, vol.2438:486-95.
198. Richard Schenker, Lou Eichner, Hem Vaidya, Sheila Vaidya, and William Oldham, "Degradation of fused silica at 193-nm and 213-nm," 1995 SPIE Microlithography Conf., Optical/Laser Microlithography VIII, Vol. 2440, pp. 118-125, 1995.
199.
Schenker,
R.; Oldham, W., "Effects of compaction on 193 nm
lithographic system performance". Journal of
Vacuum Science & Technology B vol.14, no.6 Nov.-Dec.
1996. p.3709-13.
200.
Fields, C.H.; Oldham, W.G.; Ray-Chaudhuri, A.K.; Krenz, K.D.; Stulen, R.H. Direct
aerial image measurements to evaluate the
performance of an extreme ultraviolet projection
lithography system. Journal of Vacuum Science
& Technology B vol.14, no.6,
Nov.-Dec. 1996. p.4000-3.
201. R. Schenker, F. Piao, W. Oldham, "Material Limitations to 193-nm Lithographic System Lifetimes," SPIE Vol. 2726, Optical Microlithography IX, 1996.
202.
Schenker,
R.E.; Oldham, W.G. Ultraviolet-induced
densification in fused silica. Journal of
Applied Physics, vol.82, no.3 ,
p.1065-71, Aug. 1997.
203.
Oldham, W.G.; Schenker, R.E. 193-nm lithographic
system lifetimes as limited by UV compaction.
Solid State Technology, vol.40, no.4 ,
PennWell Publishing,
April 1997. p.95-6, 98, 100, 102.
204.
Schenker,
R.; Oldham, W.
Compaction-limited system lifetime in
193-mn optical lithography, MICROELECTRONIC
ENGINEERING, MAR, 1998, V42:141-144.
205.
Schenker,
R.; Oldham, W.
Damage-limited lifetime of 193-nm
lithography tools as a function of system
variables, APPLIED OPTICS, FEB 1, 1998,
V37(N4):733-738.
206.
Schenker,
R.E.; Oldham, W,G.
Ultraviolet-induced densification in
fused silica, JOURNAL OF APPLIED PHYSICS, AUG 1,
1997, V82(N3):1065-1071.
207. Schenker, R.; Piao, F.; Oldham, W.G. "Durability of experimental fused silicas to 193-nm-induced compaction", Proceedings of the SPIE - The International Society for Optical Engineering, vol.3051, (Optical Microlithography X, Santa Clara, CA, USA, 12-14 March 1997.) SPIE-Int. Soc. Opt. Eng, 1997. p.44-53.
208. Fields, C.H.; Ray-Chaudhuri, A.K.; Krenz, K.D.; Oldham, W.G.; Stulen, R.H. "Measurement of mid-spatial frequency scatter in extreme ultraviolet lithography systems using direct aerial image measurements", Proceedings of the SPIE - The International Society for Optical Engineering, vol.3048, (Emerging Lithographic Technologies, SantaClara, CA, USA, 10-11 March 1997.) SPIE-Int. Soc. Opt. Eng, 1997. p.356-67.
209. Piao, F.; Schenker, R.; Oldham, W.G. "Temperature dependence of UV-induced compaction in fused silica", Proceedings of the SPIE - The International Society for Optical Engineering, vol.3051, (Optical Microlithography X, Santa Clara, CA, USA, 12-14 March 1997.) SPIE-Int. Soc. Opt. Eng, 1997. p.907-12.
210. F. Piao, W. G. Oldham, and W. G. Haller, "Thermal Annealing of Deep Ultraviolet (193 nm) Induced Compaction in Fused Silica", J. Vacuum Science and Tech. B, NOV-DEC, 1998, V16(N6):3419-3421.
211. N. Chokshi, Y. Shroff, W. G. Oldham, et al., "Maskless EUV Lithography,"
Int. Conf. Electron, Ion, and Photon Beam Technology and
Nanofabrication, Marco Island, FL, June 1999.
212.
Choksi, N; Pickard,
DS; McCord, M; Pease, RFW; Shroff, Y; Chen, YJ;
Oldham, W; Markle, D. " Maskless Extreme
Ultraviolet lithography." J.
Vac Science &
Tech. B, Nov-Dec, 1999, V17(N6):3047-3051.
213. Fan, PA; Oldham, WG; Haller, EE. "Ultraviolet-induced Densification of Fused Silica."
J. Appl. Phys. , Apr 1, 2000, V87(N7):3287-3293.
214.
Y. Chen, Y. Shroff, W. G. Oldham, "Phase-lead
Compensator to Improve the Transient Performance
of Comb Actuator,Technical
Proceedings of the Third International Conference
on Modeling and Simulation of Microsystems,
P178-180, 2000.
215. Y. Chen, Y. Shroff, W. G. Oldham, "Transient and Resonant Behavior of Electrically-Damped Microactuators," International Mechanical Engineering Congress & Exposition (IMECE)-MEMS, Orlando, Nov 2000, P7-12.
216. Y. Chen, Y. Shroff, W. G. Oldham, "Switching of a Double-Comb Actuator by Time-Lag Modulation and Electrical- Damping Control," International Mechanical Engineering Congress & Exposition (IMECE)-MEMS, Orlando, Nov 2000, P157-160.
217. Y. Chen, Y. Shroff, W. G. Oldham, "Parasitic-Capacitance Induced Variations of the Transient Behavi or of Damped Microactuators," International Mechanical Engineering Congress & Exposition (IMECE)-MEMS, Orlando, Nov 2000, P325-329.
218. Y. Chen, Y. Shroff, W.G. Oldham, "Transient Optimization of an Electrically-Damped Cantilever-Supported Microactuator and the Pull-In Analysis," International Mechanical Engineering Congress & Exposition (IMECE)-MEMS, Orlando, Nov 2000, P319-324.
219. Lee, SH; Naulleau, P; Goldberg, KA; Piao, F; Oldham, W; Bokor, J; "Phase-shifting point-diffraction interferometry at 193 nm. "APPLIED OPTICS, NOV 1, 2000, V39(N31):5768-5772.
220. Piao, F; Oldham, WG; Haller, EE. "The mechanism of radiation-induced compaction in vitreous silica. "JOURNAL OF NON-CRYSTALLINE SOLIDS, OCT, 2000, V276(N1-3):61-71.
221. Sang Hun Lee, Piao F, Naulleau P, Goldberg KA, Oldham W, Bokor J. “At-wavelength characterization of DUV-radiation-induced damage in fused silica”. [Conference Paper] SPIE-Int. Soc. Opt. Eng. Proceedings of Spie - the International Society for Optical Engineering, vol.3998, 2000, pp.724-31. USA.
222. Y. Shroff, Y. Chen, W. G. Oldham, "Fabrication of Parallel-Plate Nanomirror Arrays for EUV Maskless Lithography," The 45th International Conference on Electrons, Ions and Photon Beam Technology and Nanofabrication, Washington, May 30- June 1, 2001
223.
W. G. Oldham, Y. Shroff, Y. Chen, "Mirror
Technology for EUV Maskless Lithography,"
International Symposium on Microelectronic and
MEMS technology, Edinburgh, Scotland, May
30-June 1, 2001
224. Shroff Y. Chen YJ. Oldham W.
“Fabrication of parallel-plate nanomirror arrays for
extreme ultraviolet maskless lithography .” [Article]
Journal of Vacuum Science & Technology
B. 19(6):2412-2415, 2001 Nov-Dec
225. W. G. Oldham and Y. Shroff ,“Mirror-based pattern generation for maskless lithography”, Microelectronic Engineering 73-74, pp 42-47, June 2004.
226. B. Nikolic,
B. Wild, V. Dai, B. Warlick,
A. Zakhor, W.
Oldham, “Layout
Decompression chip for maskless lithography”,
SPIE-Int Soc. Opti. Eng. Proceedings
of Spie Vol 5374, pp 1092-9,
2004
227. Y. Shroff, Y Chen, W. Oldham, “Image
Optimization for maskless lithography”, SPIE-Int Soc. Opti. Eng. Proceedings
of Spie Vol 5374, pp 637-47,
2004
PATENTS
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8. European
Patent
#DT 27 04 626, "Verfahren
zur Bildung einer Verbindungszone in
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Letters
Patent #5,233,460, "Method and Means for
Reducing Speckle in Coherent Laser Pulses",
with W. N. Partlo,
filed Jan 31, 1992 (issued August 3, 1993).
11. US Letters Patent #7075699 , "Double hidden
flexure microactuator for phase mirror array",
W. G. Oldham, Yijian Chen, Yashesh Shroff, filed
Sept 28, 2004
12. US Letters Patent #7141806, "EUV Light
Source collector erosion mitigation", W. N.
Partlo, A. I. Ershov, I. V. Fomenkov, D. W.
Myers, W. Oldham , filed Nov 28,2005
13.US Letters
Patent #8075732, "EUV collector debris
management", W.N.Partlo, R. L. Sandstrom, I. V.
Fomenkov, A. I. Ershov, W.Oldham, W. F. Marx, O.
Hemberg, filed Nov 1, 2004
14 US
Letters Patent #20120292527, "Filter for
Material Supply Appartus", I. V. Fomenkov, W. N.
Partlo, G. O. Vaschenko, W. Oldham, filed May
20, 2011