William G. Oldham                                                                                                             





1. "N-n Semiconductor Heterojunctions,"Solid State Elec.,Vol. 6, p. 121 (1963)  (with A. G. Milnes).


2. "Interface States in Abrupt Semiconductor Heterojunctions," Solid State Elec., Vol. 7, p. 153 (1964)  (with A. G. Milnes).


3. "Semiconductor Heterojunctions,"(Ph.D. thesis) Carnegie Institue of Technology,  Office of Technical Services AD 412-297.


4. "Chemical Polishing of GaP,"Electrochem. Tech.,Vol. 3, p. 57 (1965).


5. "Vapor Growth of GaP on GaAs Substrates,"J. Appl. Phys.,Vol. 36, p. 2887 (1965).


6. "Resistivity Control of Ge Grown by GeI2Disproportionation," (Communication) J. Appl. Phys., Vol. 36, p. 3685 (1965)  (with A. R. Riben and D. L. Feucht).


7. "Preparation of Ge/Si and Ge/GaAs Heterojunctions," J. Electrochem. Soc., Vol. 113, p. 245 (1966)  (with A. R. Riben and D. L. Feucht).


8."The Growth and Etching of Silicon Through Windows in SiO2," J. Electrochem Soc., Vol. 114, p. 381 (1967)  (with R. Holmstrom).


9. "Elipsometry Using a Retardation Plate as Compensator," J. Opt. Soc. of Amer., Vol. 57, p. 617 (1967).


10. "Electrooptic Junction Modulators," J. Quantum Electronics, QE-3, p. 278 (1967)  (with Ali Bahraman).


11. "Diffusion of Impurities in Irradiated Silicon, "Trans. AIME,Vol. 245, p. 505 (1969).


12. "Numerical Techniques for Lossy Films, "Surface Science, Vol. 16, pp. 97-103 (1969).


13 ."Lifetime in Neutron-Irradiated Silicon Application to Devices, "IEEE Trans. Nucl. Sci.,NS-17, pp. 26-33 (1970).


14. "Neutron Radiation Effects in  Junction Field-Effect Transistors,"   IEEE Trans. on Nucl. Sci.,  NS-18 (1971)  (with S. S. Naik).  


15.  An Introduction to Electronics,  Holt, Rinehart and Winston,  New York, 629 pages (1972)  (with S. E. Schwarz).  


16. "Neutron Produced Trapping Centers in Junction  Field Effect Transistor,"    IEEE Trans. Nuc. Sci.,  NS-18, 6, pp. 50-59 (1971)  (with B. L. Gregory and S. S. Naik).


17.  "A New Method for Voltage Breakdown  Determination in pn Junctions,"    Appl. Phys. Lett.,  19, 11, pp. 466-467 (1971)  (with P. Antognetti and R. R. Samuelson).  


18.  "Role of Copper in the Degradation of GaAs  Luminescent Diodes,"   J. Appl. Phys.,  43, 5, pp. 2383-2387 (1972)  (with A. Bahraman).  


19.  "The Temperature Variation of the  Electron Diffusion Length and the Internal  Quantum Efficiency in GaAs Electroluminescent Diodes,"   Solid State Electronics,  15, pp. 907-917 (1972)  (with A. Bahraman).


20.  "Triggering Phenomena in Avalanche Diodes,"    IEEE Trans. Elec. Devices,  ED-19, pp. 1056-1060 (1972)  (with R. R. Samuelson  and P. Antognetti).  


21.  "Radiation Produced Trapping Effects in Devices,"   IEEE Trans. Nuc. Sci.,  NS-19, pp. 347-354 (1972).  


22.  "A One Transistor Memory Cell with Non-Destructive  Readout," Digest of Technical Papers,    IEEE Solid State Circuit Conference,  pp. 34-35 (February 1973)  (with S. Cserveny and H. Sigmund).  


23.  "Optical Properties of Pb1-xSnxTe Alloys,"  (with P. S. Cross), presented at the International  Conference on Narrow Gap Semiconductors, Nice (September 1973).  


24.  "Measurement of Neutral Base Lifetime  in Neutron-Irradiated Transistors,"    IEEE Trans. on Nuclear Science,  NS-20, No. 6, pp. 266-273 (December 1973)  (with M. M. Sanga).  


25.  "Properties of Heavily Irradiated MOSFETS,"    IEEE Trans. on Nuclear Science,  NS-21, No. 6, pp. 124-129 (December 1974)  (with E. T. Gaw).  


26.  "Monolithic Measurement of Optical Gain  and Absorption in PbTe,"   J. Appl. Phys.,  Vol. 46, No. 2, pp. 952-954 (February 1975)  (with P. S. Cross).  


27.  "Theory of Optical-Gain Measurements,"    IEEE Jour. Quantum Electronics,  Vol. QE-11, No. 5, pp. 190-197 (May 1975)  (with P. S. Cross).  


28.  "Enter the 16,384-Bit RAM,"    Electronics,  AR-20, pp. 116-121 (February 19, 1976)  (with J. E. Coe).  


29.  "16K RAM Technology," IEEE Solid State Circuits  Committee, New York, February 17, 1976.   


30.  "A 16,384-Bit Dynamic RAM,"    IEEE Jour. Solid State Circuits,  Vol. SC-11, No. 5, pp. 570-574 (October 1976)  (with C. N. Ahlquist, J. R. Breivogel, J. T. Koo,  J. L. McCollum, and A. L. Renninger).  


31.  "Get Ready for the New Generation of Dynamic RAM's,"    Evaluation Engineering,  32-35 (January/February 1977) (with R. Abbot, C. Barrett, J. Coe, and P. Spiegel).  


32.  "Process for Forming a Low Resistance Interconnect in  MOS N-Channel Silicon Gate Integrated Circuits,"  U.S. Patent #4,013,489, issued March 22, 1977.  


33.  "Si Materials Advances - The Challenge of High Resolution,"    AIME Annual Electronic Materials Symp.  (March 30, 1977).  


34.  "The Fabrication of Microelectronics Circuits,"    Scientific American,  110-126 (September 1977).  


35.  "Use of Simulation to Optimize Projection Printing Profiles,"   Proc. of the Symp. on Electron and Ion Beam Science and    Technology, Eighth International Conference,  The Electrochemical Society, Vol. 78-5, pp. 206-216 (1978)  (with A. R. Neureuther, M. O'Toole, and S. N. Nandgaonkar).  


36.  "In-Situ Characterization of Positive Resist Development,"   Optical Engineering,  Vol. 18, pp. 59-62 (January 1979).  


37.  "A General Simulator for VLSI Lithography and Etching  Processes:  Part I - Application to Projection Lithography,"    IEEE Trans. of Elec. Devices,  Vol. ED-26, pp. 717-722 (April 1979)  (with S. N. Nandgaonkar, A. R. Neureuther, and M. M. O'Toole).  


38.  "Carrier Recombination through Donors/Acceptors in Heavily Doped Silicon",    Appl. Phys. Lett. 35,  pp. 636-639 (15 Oct 1979) (with Chenming Hu).  


39.  "The Oxidation of Polysilicon," presented in Spring Meeting, Electrochemical Society, Boston, MA (May 6, 1979)    ECS Extended Abstracts,  Vol. 79-1, pp. 439-440  (with N. Chau and N. Rovedo).  


40. "Simulation and Modeling of Profiles in Lithography and Etching," published in    IEEE Conference Record,  Third Biennial University/Industry/Government  Microelectronics Symposium, pp. 116-122 (May 1979) (with  A. R. Neureuther).  


41.  "Simulation of Dry Etched Line Edge Profiles,"    J. Vac. Sci. Technol.,  16(6), pp. 1767-1771 (November/December 1979) (with J. L. Reynolds  and A. R. Neureuther).


42.  "A Study of a High Performance Projection Stepper Lens,"   International Conference on Microcircuit Engineering    79 - Microstructure Fabrication,  Aachen, Germany  (September 25-27, 1979) (with C. N. Ahlquist and P. Schoen).  


43.  "A Study of a High Performance Projection Stepper Lens,"  Kodak Microelectronics Seminar, San Diego, California  (October 1979) (with C. N. Ahlquist and P. Schoen).  


44.  "A MESFET Model for Circuit Analysis,"    Solid-State Electronics, Vol. 23, pp. 121-126 (February 1980) (with C. D. Hartgring and  T-Y Chiu).  


45.  "The Limits of Optical Lithography," in    Device Impact of New Microfabrication Technologies,  Summer Course, Katholieke Universitat, Leuven, Vol. II (June 1980).  


46.  "New Dimensions in Optical Lithography,"   Device Research Conference, IEEE Electron Device Society,  Ithaca, NY (June 23-25, 1980).  


47.  "A General Simulator for VLSI Lithography and Etching  Processes:  Part II - Application to Deposition and Etching,"    IEEE Trans. Electron Devices,  Vol. ED-27, No. 8, pp. 1455-1459 (August 1980) (with A. R. Neureuther,  C. Sung, J. L. Reynolds, and S. N. Nandgaonkar).  


48.  "AZ 1350H as a Negative Electron Resist by Image Reversal,"    Proceedings, Microcircuit Engineering 80  (September 1980).  


49.  "Soft Failures in Electronic Systems from Ionizing Radiation,"  ECS Meeting, Orlando, Florida (October 1980).  


50.  "A High Resolution Negative Electron Resist by Image Reversal,"   IEEE Electron Device Letters,  Vol. EDL-1, No. 10, pp. 217-219 (October 1980) (with E. Hieke).  


51.  "A 1 um Process:  Linewidth Control Using 10:1 Projection Lithography,"    Technical Digest,  International Electron Device Meeting, pp. 429-432 (December 1980)  (with R. Sigusch, K. H. Horninger, W. A. Mueller, and  D. Widmann).  


52.  "Factors Affecting Linewidth Control Including Multiple  Wavelength Exposure and Chromatic Aberration,"    Semiconductor Microlithography VI,  SPIE Vol. 275, pp. 110-116 (May 1981) (with P. K. Jain  and A. R. Neureuther).  


53.  "Projection Lithography with High Numerical Aperture Optics,"   Solid State Technology,  pp. 106-111 (May 1981) (with A. R. Neureuther).


54.  "Optical Requirements for Projection Lithography,"    Solid-State Electronics,  Vol. 24, No. 10, pp. 975-980 (1981) (with A. R. Neureuther and S. Subramanian).  


55.  "Selective Oxidation Technologies for High Density MOS,"    IEEE Electron Device Letters,  Vol. EDL-2, No. 10, pp. 244-247 (1981) (with J. Hui,  T. Y. Chiu, and S. Wong).  


56.  "Sheet Resistance Junction Depth Relationships in Implanted Arsenic Diffusion,"    IEEE Electron Device Letters,  Vol. EDL-2, No. 10, pp. 275-277 (1981) (with T. M. Liu).  


57.  "Contrast in High-Performance Projection Optics,"  2  Proceedings, Kodak Microelectronics Seminar, Interface 81,  Dallas, pp. 75-80 (October 1981) (with P. Jain, A. R. Neureuther,  C. Ting, and H. Binder).


58.  "Alignment Signals from Symmetrical Silicon Marks for Electron Beam Lithography,"    Proceedings, Kodak Microelectronics Seminar, Interface 81,  Dallas, pp. 109-116 (October 1981) (with Y. C. Lin and A. R. Neureuther).


59.  "Influence of Axial Chromatic Aberration in Projection  Printing," IEEE Trans. on Electron Devices,  Vol. ED-28, No. 11, pp. 1410-1416 (1981) (with P. Jain and  A. R. Neureuther).


60.  "Reduction of Linewidth Variations in Optical Projection Printing," Proceedings, Microcircuit Engineering  (Sept 1981) (with L. Mader and D. Widmann).  


61.  "Sealed-Interface Local Oxidation Technology,"    Digest, International Electron Devices Meeting,  Washington D.C., p. 706 (Dec 1981) (with J. Hui, S. Wong, and T-Y. Chiu).  


62.  "Soft Error Studies Using a Scanning Source,"  Proceedings,  International Reliability Physics Symposium,  San Diego, pp. 88-91 (April 1982) (with F. Henley). 


63. "Sealed-Interface Local Oxidation Technology,"  IEEE Trans. Electron Dev.,  ED-29, pp. 554-560 (1982) (with J. C-H. Hui, T-Y. Chiu, and S-W. S. Wong). 


64.  "Resist Characterization: Procedures, Parameters, and Profiles,"  SPIE Vol 334 Optical Lithography-Technology for the Mid-1980s, pp. 182-187 (1982) (with M. Exterkamp, W. Wong, H. Damar, C. H. Ting and A. R. Neureuther). 


65. "Towards Finer Lines: Process Control in Optical Lithography,"  Semicon West 1982 Technical Program Proceedings, pp. 108-113 (May 1982) (with P. Antognetti and C. Fasce). 


66. "A JMOS Transistor Fabricated with 100 Angstrom Low Pressure Nitrided-Oxide Gate Dielectric,"  40th Annual Device Research Conference, Fort Collins (June 21-23, 1982) (with C. G. Sodini, S. S. Wong, and T. W. Ekstedt). 


67. "Optical and Deep UV Lithography," 2 Nato Advanced Study Institute on Process and Device Simulation For MOS-VLSI, Urbino (July 1982). 


68. "Low Energy Implantation of Nitrogen and Ammonia into Silicon,"  4th International Conference on Ion Implantation, Berchtesgaden (Sept, 1982) (with T. Y. Chiu and C. Hovland). 


69. "Alpha Particle Collimator for Micron-sized Beam,"  Rev. Sci. Instrum 53, pp. 1581-1585 (Oct 1982) (with F. J. Henley). 


70. "Process Parameter Control in Optical Lithography," 

Digest of Technical Papers, 14th International Conf on Solid State Devices,  Tokyo (Sept 1982) (with C. Fasce and P. Antognetti). 


71. "Characterization of Resist Development: Models, Equipment, Method, and Experimental Results,"  Proceedings, Kodak Microelectronics Seminar, Interface 82, pp. 100-104, San Diego (Oct 1982) (with D. J. Kim and A. R. Neureuther). 


72. "Optical Lithography, Directions and Limits,"  Bull. Amer. Physical Soc., Vol 27, No. 8, Part 1, p. 870 (Oct 1982). 


73. "Isolation Technology for Scaled MOS VLSI,"  Digest, International Electron Devices Meeting (Dec 1982). 


74. "Electrical Properties of Sealed-Interface Local-Oxidation Isolated Devices,"  Digest, International Electron Devices Meeting (Dec. 1982) (with J. Hui, T. Y. Chiu, and S. Wong). 


75. "Channeling Effect of Low Energy Boron Implant in (100) Silicon,"  IEEE Electron Device Letters, Vol. EDL-4, pp. 59-62 (March 1983) (with T. M. Liu). 


76. "CMOS Latch-Up Characterization Using a Laser Scanner,"  Proceedings, 21st Annual International Reliability Physics Symposium, Phoenix, Arizona, pp. 122-130 (April 1983) (with F. J. Henley and M. H. Chi). 


77. "Two Dimensional Oxidation Mechanisms in Local  Oxidation Processes,"  Electrochemical Society Spring Meeting 1983, Extended Abstracts, pp. 591-592 (May 1983) (with J. C. H. Hui). 


78. "Very Shallow Ion-Implanted Boron Junction,"  Electrochemical Society Spring Meeting 1983, Extended Abstracts, pp. 631-632 (May 1983) (with T. M. Liu). 


79. "Low-Energy Implantation of Nitrogen and Ammonia into Silicon,"  Electrochemical Society Spring Meeting 1983, Extended Abstracts pp. 204-205 (May 1983) (with T. Y. Chiu). 


80. "Threshold Shift from As Implantation of SiO2,"  Electrochemical Society Spring Meeting 1983, Extended Abstracts, pp. 629-630 (May 1982) (with R. Kazerounian). 


81. "Composition, Electrical Conduction, and Charge-Trapping Properties of Nitrided-Oxide and Re-Oxidized Nitrided-Oxide,"  Electrochemical Society Spring Meeting 1983, Extended Abstracts, pp. 200-201 (May 1983) (with S. S. Wong, S. H. Kwan, and H. R. Grinolds). 


82. "Isolation Technology for Scaled MOS VLSI,"  Technical Proceedings, Semicon West, pp. 33-39 (May 1983). 


83. "Alignment Signals from Symmetrical Silicon Marks for Electron Beam Lithography,"  J. Electrochem. Soc.: Solid-State Science & Technology, pp. 939-944 (April 1983) (with Y-C Lin and A.R. Neureuther). 


84. "CODMOS - A Depletion Load Technology with Fixed Oxide Charge,"  IEEE Device Research Conference, Burlington VT (June 1984) (with R. Kazerounian). 


85. "Low Pressure Nitrided-Oxide as a Thin Gate Dielectric for MOSFET's,"  J. Electrochem. Soci: Solid-State Science & Technology, pp. 1139-1144 (May 1983) (with S.S. Wong, C.G. Sodini, T.W. Ekstedt, H.R. Grinolds, K.H. Jackson, and S.H. Kwan). 


86. "Contrast Studies in High-Performance Projection Optics,"  IEEE Trans. Elec Devices, pp. 1474-1479 (November 1983) (with W. Arden H. Binder and C. Ting). 


87. "Characterization and Modeling of a Resist With Built-In Induction Effect,"  Proceedings, Kodak Microelectronics Seminar, Interface 82, San Diego, pp. 112-117 (October 1983) (with D.J. Kim and A.R. Neureuther). 


88. "Anodic Si3N4 Grown in a New Plasma Reactor,"  Digest, Technical Proceedings, 1983 Symposium on VLSI Technology, Maui, pp. 88-89 (with S.S. Wong and H.R. Grinolds). 


89. "Citation Classic - Interface States in Abrupt Semiconductor Heterojunctions,"  Current Contents, p. 22 (November 14, 1983) (with A.G. Milnes). 


90. "A JMOS Transistor Fabricated with 100A Low Pressure Nitrided-Oxide Gate Dielectric,"  IEEE Trans Elec Dev., pp. 17-21 (January 1984) (with C. G. Sodini, S. S. Wong, T. W. Ekstedt, and H. R. Grinolds). 


91.  Process and Device Simulation for MOS-VLSI Circuits, (book), (Co-edited: D.A. Antoniadis, R.W. Dutton, and D. Antognetti), Martinus Nijhoff Publishers (1983). 


92. "Composition and Electrical Properties of Nitrided-Oxide and Re-Oxidized Nitrided-Oxide,"  Silicon Nitride Thin Insulating Films, (Eds. V.J. Kapoor and H.J. Stein), Electrochemical Society, Pennington NJ (1983) (with S.S. Wong, S.H. Kwan and H.R. Grinolds). 


93. "Low Energy Implantation of Nitrogen and Ammonia into Silicon,"  Silicon Nitride Thin Insulating Films, (Eds. V.J. Kapoor and H.J. Stein), Electrochemical Society, Pennington NJ, pp. 366-381 (1983) (with T.Y. Chiu). 


94. "Low Energy Implantation of Nitrogen and Ammonia into Silicon,"  Springer Series in Electrophysics,  Volume II:  Ion Implantation: Equipment and Techniques, (Eds. H. Ryssel and H. Glawischnig), Springer-Verlag Berlin Heidelberg, Germany, pp. 465-472 (1983) (with T.Y. Chiu and C. Hovland). 


95. "1 um Lithography, Optical and Resist-Limited Control," Session I, Patterning - SEMICON/Europa  Semiconductor Proc. & Equip. Symposium, Zurich (March 13-15, 1984) (with I.S. Hsu and D.J. Kim). 


96. "A Multi-Wafer Plasma System for Anodic Nitridation and Oxidation,"  Electron Device Letters, pp. 175-177 (May 1984) (with S.S. Wong). 


97. "Determining Specific Contact Resistivity from Contact End Resistance Measurements,"  IEEE Electron Device Letters, Vol. EDL-5, No. 5, pp. 178-180 (May 1984) (with J.G.J. Chern). 


98. "Anodic Nitridation of Silicon-Dioxide," Electronic Materials Conference (June 15, 1984) (with S.S. Wong). 


99.  Electrical Engineering: An Introduction, (book),  CBS College Publishing, (1984) (with S.E. Schwarz). 


100. "Shallow Boron Junctions Implanted in Silicon Through a Surface Oxide,"   Electron Device Letters, Vol. EDL-5, pp. 299-301 (Aug. 1984) (with T.M. Liu).


101.  "Development of Positive Photoresist,"   IEEE Transactions on Elect. Devices, Vol. ED-31, pp. 11730-1735 (Dec. 1984) (with D.J. Kim, and A.R. Neureuther). 


102. "Contact Electromigration Induced Leakage Failure in Al/N+ SI and P+SI Contacts,"   2 The Electrochemical Society,  Symposium on Electromigration of Metals, October 7-12 (1984) (with J. Chern and N. Cheung). 


103. "The Material Properties of Silicon Nitride Formed by Low Energy Nitrogen Ion-Implantation,"  J. Electrochemical Society, Vol 131, pp. 2110-2115 (Sept. 1984) (with T. Chiu and C. Hovland). 


104. "MOS Isolation Technology,"  1985 European Solid State Device Conference Lille (Sept. 1985) (with Y. Shacham-Diamand, P.L. Pai, K. Young and P. Sutardja). 


105. "Planarization with Spin-on-Glass/LPCVD Composite Films,"  3 Digest of Papers, 1985 International Symposium on VLSI Technology, Uobe, Japan, pp. 52-53 (May 14-16, 1985) (with F. Dupuis and Y. Shacham-Diamand). 


106. "Anodic Nitridation of Silicon and Silicon Dioxide,"  IEEE Transactions on Electron Devices, Vol. ED-32, No. 5, pp. 978-982 (May 1985) (with S. Simon Wong). 


107. "Resist Modeling and Profile Simulation,"  Solid State Technology, pp. 139-144 (May 1985) (with A.R. Neureuther). 


108. "Plasma-Enhanced Nitridation of SiO2--Bias Effects," Proceedings of Technical Papers,   1985 International Symposium on VLSI Technology,  Systems and Applications, Taipei, Taiwan, pp. 291-294 (May 8-10, 1985) (with K. Young). 


109. "Proximity Effects and Printability of Defects in GexSe1- x  Resist,"  J. Vac. Sci. Technology, Vol. 3, No 1, pp. 310-313 (January/February, 1985) (with W. Leung and A.R. Neureuther).  


110. "The Electrical Properties of Hg-sensitized PHOTOX Deposited at 80 C," 1985 Electronics Materials Conference, Boulder, Colorado (June 19-21, 1985) (with T. Chuh, Y. Shacham-Diamand and Pei-Lin Pai). 


111. "The Effect of Hydrogen on Boron Diffusion in SiO2," 1985 Electronics Materials Conference, Boulder, Colorado (June 19-21, 1985) (with Y. Shacham-Diamand).  


112. "Simulation of Lithography," Chapter 3 in  Process and Device Modeling, W. L. Engl, Editor, Elsevier Science Publishers B.V. (1986) (with  A.R. Neureuther). 


113. "Contact-Electromigration Induced Leakage Failure in Aluminum-Silicon to Silcon Contacts,"  IEEE Trans. Elec. Devices, Vol. ED-32, No. 7, (July 1985) (with J. Chern and N. Cheung). 


114. "High Resolution Additive Thin Film Patterning,"  2 Interface 85, Kodak Microelectronics Seminar, San Diego, CA (November, 1985) (with P.L. Pai and Y. Shacham-Diamand). 


115. "The Advanced Berkeley CMOS Process,"  VLSI Workshop on Test Structures, Long Beach, CA (February 1986) (with Y. Shacham-Diamand and A.R. Neureuther). 


116. "Inorganic Resist Phenomena and Their Applications to Projection Lithography,"  IEEE Trans. on Electron Devices, Vol. ED-33, No. 2 (February 1986) (with W. Leung and A.R. Neureuther). 


117. "The Properties of Sub-100 A Thin-gate Oxide-Nitride Stacked Films,"  VLSI Symposium, San Diego, CA (May 1986) (with K. Young). 


118. "Two-Dimensional Simulation of Glass Reflow and Silicon Oxidation,"  VLSI Symposium, San Diego, CA (May 1986) (with P. Sutardja and Y. Shacham-Diamand). 


119. "A new 10:1 Photomask Reduction Camera,"  SPIE Symposium on Microlithography, Santa Clara, CA (March 1986) (with K. Voros and P. Sutardja). 


120. "The Effect of Hydrogen on Boron Diffusion in SiO2,"  Transactions of the Metallurgical Society of AIME (1986) (with Y. Shacham-Diamand). 


121. "A High Resolution Lift-Off Technology for VLSI Interconnections,"  1986 Proceedings Third International IEEE VLSI  Multilevel Interconnection Conference, Santa Clara, CA (June 9-10, 1986) (with P.L. Pai and  Y. Shacham-Diamand). 


122. "Electromigration in Al/SI Contacts--Induced Open-Circuit Failure,"  IEEE Trans on Electron Devices, Vol. ED-33, No. 9 (September 1986) (with J.G.J. Chern and N. Cheung). 


123. "Electrical Properties of Hg-Sensitized 'Photox' Oxide Layers Deposited at 80C",  Solid-State Electronics, Vol. 30, No. 2, pp. 227-233 (1987) (with Y. Shacham-Diamand and T. Chuh). 


124. "The Use of Contrast Enhancement Layers to Improve the Effective Contrast of Positive Photoresist,"   IEEE Transactions of Electron Devices, Vol. ED-34, No. 2 (February 1987). 


125. "Get Submicrometer Resolution with Optical Lithography,"   Research & Development, pp. 92-95, (January 1987) (with James A. Schoeffel). 


126. "Modeling of Stress-Effects in Silicon Oxidation including the Non-Linear Viscosity of Oxide",  IEDM Digest of Technical Papers, pp. 264-267, (December 1987) (with Pantas Sutardja, D.B. Kao). 


127. "Charge Transport and Trapping Model for Scaled Nitride-Oxide Stacked Films",  Applied Surface Science 30, North-Holland, Amsterdam, pp. 171-179 (1987) (with K.K. Young, C. Hu). 


128. "Silicon Epitaxy in an LPCVD Furnace",  IEEE VLSI International Technical Digest, pp. 79-80, VLSI Symposium, San Diego (May 1988) (with Carl Galewski). 


129. "A Lift-off Process Using Edge Detection (LOPED)",  IEEE Transactions on Semiconductor Manufacturing",  Vol. 1, Number 1, pp. 3-9 (Feb. 1988) (with Pei-Lin Pai). 


130. "High-Resolution Imaging Using Focused-Image Holography with Wave-Front Conjugation",  Proceedings of SPIE - The International Society of Optical Engineering, Vol. 922, pp. 18-25 (March 1988) with Ginetto Addiego). 


131. "A Compact Optical Imaging System for Resist Process and Lithography Research",  Proceedings of SPIE,  Vol. 92a, pp. 471-475 (March 1988) (with John H. Bruning). 


132. "A Framework for Multilevel Interconnection Technology",  VLSI Multilevel Interconnection Conference", pp. 108-114 (June 1988) (with Pei-Lin Pai, Chiu H. Ting). 


133. "Ion Transit Through Capacitively Coupled Ar Sheaths:  Ion Current and Energy Distribution",  Journal of Applied Physics, pp. 1367-1371, (February 1988) (with W.M. Greene, D.W. Hess). 


134. "Comparison of Low-Pressure and Plasma-Enhanced Chemical Vapor Deposited Tungsten-Thin Films",  Applied Physics Letters, pp. 113-115, (Mar/Apr 1988) (with W.M. Greene, D.W. Hess) 


135. "Test Patterns and Simulation Software for Characterization of Optical Projection Printing",  Proceedings of KTI Microelectronics Seminar pp. 113-122, (November 1988) (with A.R. Neureuther, B. Huynh, K.K.H. Toh, R. Ferguson, W.E. Haller and D. Sutija). 


136. "Simulation of Back-Of-The-Line Processes with SAMPLE",  Proceedings of KTI Microelectronics Seminar pp. 261-281, (November 1988) (with Don E. Lyons, Stephen F. Meier, LeRoy Winemberg, A.R. Neureuther). 


137. "Ion-bombardment-enhanced Plasma Etching of Tungsten with NF3O2,"  J. Vac. Sci., Technol. B6 pp.  1570-1572, Sep/Oct 1988, (with S.M. Greene and D.W. Hess). 


138. "Plasma- and Gas-surface Interactions During the Chemical Vapor Deposition of Tungsten from H2WF6,"  Journal of Applied Physcis, 64 (9), pp. 4696-4703, November 1988, (with W.M. Greene, and D.W. Hess). 


139. "Ion Current, Energy Distribution, and Radical Species Detection in RF Plasmas by Cylindrical Mirror Analyzer Quadrupole Mass Spectroscopy",  Materials Research Society Symposium Proceedings, vol. 117, pp. 61-65, 1988. 


140. "Low Temperature Selective Epitaxy in a Hot-Wall Reactor",  Proceedings of SEMICON/EUROPA, pp. 67-77, (March 1989) (with Carl Galewski). 


141. "Automated Resist Modeling and Simulation-Calibrated Test Patterns for Characterization of Optical Projection Printing",  Proceedings of SRC Techcon '88 pp. 304-307, 1988 (with A.R. Neureuther, B. Huynh, K.K.H. Toh, W.R. Bell, C. Zee, G. Misium, R. Ferguson, W.E. Haller and D. Sutija). Oct. 12, 1988. 


142. "The Diffusion of Ion-implanted Arsenic in thermally Grown SiO2"  Journal of Electronic Materials, Jan 1989. (with Yosi Shacham-Diamand and Reza Kazerounian


143. "Deep-UV Photolithography with a Small-Field, 0.6 N.A.   Microstepper",  SPIE Optical/Laser Microlithography II Proceedings, vol. 1088, pp. 471-475, 1989, (with C.A. Spence, W.N. Partlo, J.H. Bruning, D.A. Markle and R. Hsu.) 


144. "Diffraction Limited Imaging Using Incoherently Illuminated Holographic Masks",  SPIE Optical/Laser Microlithography II Proceedings, vol. 1088, pp. 296-303, March 1989 (with G. Addiego


145, "Effects of Line Narrowing and Collimation on Excimer Radiation at 248 nm",  SPIE Optical/Laser Microlithography II,  vol. 1088, pp. 448-461, March 1989, (with W.N. Partlo, C.A. Spence). 


146. "Characterization of Deep-UV Pellicles for 248 nm Excimer Exposure",  Proceedings of the KTI Microelectronics Seminar, pp. 107-121, San Diego, Nov. 6-7, 1989 (with W.N. Partlo, S. Flynn). 


147. "Process Simulation and Experiment for RC-Parasitics in Multilevel Metallization",  IEEE VLSI Multilevel Interconnect Conference Proceedings, , pp. 299-305, Santa Clara, June 11-14, 1989, (with E.W. Scheckler, D.E. Lyons, and A.R. Neureuther). 


148. "An Experimental Characterization System for Deep Ultra-Violet (UV) Photoresists",  SPIE, Advances in Resist Technology and Processing VI, vol. 1086, pp. 282-288, 1989, (with D.M. Drako, W.N. Partlo and A.R. Neureuther). 


149. "Characterization and Modeling of Materials for Photolithography Simulation",  Solid State Electronics, vol. 33, no. 6, pp. 625-638, June 1990. (with C.A. Spence, R.A. Ferguson, and A.R. Neureuther).


150. "Exploratory Test Structures for Image Evaluation in Optical Projection Printing",  SPIE Optical/Laser Microlithography II Proceedings, vol. 1088, pp. 83-87 March 1989, (with A.R. Neureuther, K.K.H. Toh,  J.E. Fleischman, D. Yu, G. Misium, B. Huynh, and B. Uathavikul).


151. "Characterization of UV Resist for 248nm Lithography",  SPIE Proceedings, Advances in Resist Technology and Processing VI,  vol. 1086, pp. 502-506, 1989, (with Yosi Y. Shacham-Diamand, and W.N. Partlo). 


152. "Characterization Methods for Excimer Exposure of Deep-UV Pellicles",  SPIE 1990 Symposium on Microlithography, March 1990, (with W.N. Partlo). 


153. "Modeling of Stress Effects in Silicon Oxidation",  IEEE Transactions on Electron Devices, vol. 36, no. 11, pp. 2415-2421, November 1989, (with P. Sutardja


154. "Dynamic Measurements of Film Thickness Over Local Topography in Spin Coating",  1990 International Symposium on the Mechanics of Thin-Film Coating  (AlChE, Spring National Meeting, Orlando, FL, March 1990, &  Applied Physics Letters, June 1990 (with L.M. Manske and D.B. Graves). 


155. "Silicon Wafer Preparation for Low-Temperature Selective Epitaxial Growth",  IEEE Transactions on Semiconductor Manufacturing, vol. 3, no. 3, pp. 93-98, August 1990, (with C. Galewski and J.C. Lou.) 


156. "Construction and Characterization of a High-NA Deep-UV Projection Lithography System",   SRC TECHCON '90 Technical Program's Extended Abstract Volume,  pp. 171-174, October 16-18, 1990, San Jose, CA, (with C. A. Spence, R. Hsu and A. Pfau). 


157. "A General Approach to the Modeling and Simulation of Advanced Deep-UV Resists",   SRC TECHCON '90 Technical Program's Extended Abstract Volume, pp. 175-178, October 16-18, 1990, San Jose, CA, (with R.A. Ferguson, C.A. Spence, J.M. Hutchinson, and A.R. Neureuther). 


158. Carl Galewski, Jen-Chung Lou, and William G. Oldham, "Silicon Wafer Preparation for Low-Temperature Selective Epitaxial Growth",  IEEE Trans. on Semiconductor Manufacturing, Vol 3, No 3, pp93-98, August 1990 


159. Jen-Chung Lou, Carl Galewski, and William G. Oldham, "Dichlorsilane effects on low-temperature selective silicon epitaxy",  Appl. Phys. Lett, 58, pp59-61, Jan, 1991 


160. William N. Partlo and William G. Oldham, "Transmission Measurements of Pellicles for Deep-UV Lithography"  IEEE Trans. on Semiconductor Manufacturing, Vol 4, no. 2, pp128-133, May 1991 


161. William G. Oldham, Christopher A. Spence, Richard Hsu, and Anton Pfau, "Construction and Characterization of a High-NA Deep-UV Projection Lithography System,"  SRC TECHCON '90 San Jose, CA pp 171-174, Extended Abstracts Volume, Oct 16, 1990. 


162. Richard A. Ferguson, Chris A. Spence, John M. Hutchinson, Andrew R. Neureuther, and William G. Oldham, "A General Approach to the Modeling and Simulation of Advanced Deep-UV Resists",  SRC TECHCON '90 San Jose, CA pp 175-178, Extended Abstracts Volume, Oct 16, 1990. 


163. A.K.Pfau, W. G. Oldham, A. R. Neureuther, "Exploration of Fabrication Techniques for Phase-Shifting Masks"  PROCEEDINGS SPIE 1991 SYMPOSIUM ON MICROLITHOGRAPHY, San Jose CA, March 1991 


164. Jen-Chung Lou, William G. Oldham, Harry Kawoyoshi, and Peiching Ling, "The Selective Epitaxy of Silicon at Low Temperatures,"  1991 Spring Meeting Material Research Society, Pittsburgh, May 1, 1991 


165. William N. Partlo, and William G. Oldham, "Reducing coherence in a 5th harmonic YAG source (213nm) for use in microlithography"  35th Internation Symposium on Electron, Ion, and Photon Beams, Seattle WA, May 28, 1991. 


166. J. E. Moon, C. Galewski, T. Garfinkel, M. Wong, W. G. Oldham, P. K. Ko, and C. Hu "A Deep-Submicrometer Raised Source/Drain LDD Structure Fabricated Using Hot-Wall Epitaxy"  1991 International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp117-121, May 22-24, 1991 


167. A. K. Pfau, W. G. Oldham, and A. R. Neureuther, "Effects of Sizing, Alignment, and Defects on Projection Printing with Phase-Shifting Masks",   Digest, 1991 Symposium on VLSI Technology, pp 93-94, Oiso Japan, May 1991 


168. Y. Shacham-Diamand, A. Dedhia, D. Hoffstetter, and W. G. Oldham "Reliability of Copper Metallization on Silicon-Dioxide",  Proceedings IEEE VLSI Multilevel Interconnection Conference, pp 109-115, June 1991 


169. Jen-Cheung Lou, William G. Oldham, Harry Kawayoshi and Peiching Ling, "Process and Defect Studies in Low-Temperature Selective Epitaxial Silicon",  1991 Electronic Material Conference, Boulder Colorado, June, 1991. 


170. A. R. Neureuther, and W. G. Oldham "Resist Characterization and Lithography Simulation" (invited presentation)  Workshop on Soft X-Ray and Projection Lithography, Monterey, Ca April 1991 


171. W. N. Partlo and W. G. Oldham, "Reducing Coherence in a 5th Harmonic YAG Source (213nm) for Use in Microlithography,"   J. Vac. Sci. Tech. B, pp3126-3131, Nov 1991. 


172. W. N. Partlo and W. G. Oldham, "213nm Lithography," presented at the IEEE Workshop on Advanced Lithography, Hawaii, August 1991, 


173. A. K. Pfau, R. Hsu, W. G. Oldham, "A Two-Dimensional High-Resolution Stepper Image Monitor",  Proceedings, SPIE Symposium on Optical/Laser Microlithography V, SPIE VOL 1674, pp 182-192, 1992. 


174. J. C. Lou, W. G. Oldham, H. Kawayoshi, and P. C. Ling, "The Surface Morphology of Selectively Grown Epitaxial Silicon",  J. Appl. Phys. V70, pp685-692, July 15, 1991. 


175. C. Galewski and W. G. Oldham "A Hot-Wall Low-Pressure Reactor for Selective Silicon Epitaxy - Reactor Design and Experimental Results",  J. Electrochem. Soc. V139, pp 543-548, Feb 1992. 


176. J. C. Lou, W. G. Oldham, H. Kawayoshi, and P. C. Ling, "Plasma Etch Effects on Low-Temperature Selective Epitaxial Growth of Silicon"  J. Appl. Phys. V71, pp3225-3230, April 1992. 


177. J. C. Lou, W. G. Oldham, H. Kawayoshi, and P. C. Ling, "Fluorine Ion-Induced Enhancement of Oxide Removal Prior to Silicon Epitaxial Growth",  Appl. Phys. Lett. V60, pp1232-1234, Mar 1992. 


178.  A.K. Pfau, W. G. Oldham, and A. R. Neureuther, "Exploration of Fabrication Techniques for Phase Shifting Masks",  SPIE VOL 1463, pp 124-134, 1991 


179. A. S. Weng, R. Gronsky, J. C. Lou and W. G. Oldham, "SOI Interface Structures in Selective Epitaxial Growth",  Proceedings, 1992 Materials Research Society Symposium,  Vol 238, pp707-712, 1992. 


180. C. Galewski and W. G. Oldham, "Modeling of a High Throuput Hot-Wall Reactor for Selective Epitaxial Growth of Silicon",  IEEE Trans. Semicond. Manufacturing, V5,  pp169-179, August 1992. 


181. A.K. Pfau, W.N. Partlo, R. Hsu, and W. G. Oldham, "Quartz inhomogeneity effects in diffraction-limited deep ultraviolet imaging",  Applied Optics, vol. 31, pp 6658-61, Nov. 1992. 


182. J. Hutchinson, K. Kalpakjian, R. Schenker, W. G. Oldham, "Evaluation of Liquid Silylated Resists for 213nm Exposure"  Proceedings SPIE Advances in Resist Technology and Processing X, Vol 1925 pp414-425, March 1993. 


183. C.H. Fields, W.G. Oldham, and R.J. Bojko "The Use of Amorphous Silicon for Deep UV Masks"  Proceedings SPIE Optical/Laser Microlithography, Vol 1927 pp727-735, March 1993. 


184. W. N. Partlo and W. G. Oldham, "A Diffuser speckle model: application to multiple moving diffusers",  Applied Optics, vol 32, pp 3009-14, June 1993. 


185. J. M. Hutchinson, W. N. Partlo, R. Hsu, and W. G. Oldham, "213 nm lithography",  Microelectronic Engineering, vol. 21, pp 15-18, April 1993  (Microcircuit Engineering 92. International Conference on Microfabrication, Erlangen, Germany, 21-24 Sept. 1992). 


186. Y. Shacham-Diamand, A. Dedhia, D. Hoffstetter, and W. G. Oldham "Copper transport in thermal SiO2",  Journal of the Electrochemical Society, vol.140, pp2427-32, August 1993. 


187. C.H. Fields, W.N. Partlo, and W.G. Oldham, "Aerial Image Measurement on a Commercial Stepper",  TECHCON'93 Extended Abstract Vol, pp78-80, Sept 1993 


188. W. N. Partlo, C. H. Fields, and W. G. Oldham "Direct Aerial Image Measurement as a method of testing high numerical aperture microlithographic lenses",  "J. Vac. Sci. and Technol. Vol B11, pp 2686-2691, Nov 1993. 


189. Kent M. Kalpakjian, M. A. Lieberman,and W. G. Oldham, "High frequency reactive ion etching of silylated photoresist",  J. Vac. Sci. and Technol. Vol B12 pp 1351-1361, May 1994. 


190. R. Schenker, P. Schermerhorn, and W. G. Oldham, "Deep-UV Damage to Fused Silica",  J. Vac. Science and Technology B, Vol 12 pp 3275-79, 1994, paper given at 38th International Electron, Ion, Photon Beams Conference, New Orleans LA, June 1994. 


191. G. Wallraff, J. Hutchinson, W. Hinsberg, F. Houle, P. Seidel, R. Johnson, and W. G. Oldham, "Thermal and Acid-Catalyzed Deprotection Kinetics in Deep UV Resist Materials",  J. Vac. Science and Technology B , Vol 12, pp 3857-62, 1994, paper given at 38th International Electron, Ion, Photon Beams Conference, New Orleans LA, June 1994. 


192. Y. C. Shih, J. B. Liu, W. G. Oldham, and R. Gronsky "Epitaxial lateral overgrowth of silicon by chemical vapor deposition on ultrathin oxide layers"  Appl Phys Lett. Vol 65, pp 1142-1144, August 1994. 


193. Y. C. Shih, J. C. Lou, and W. G. Oldham, "Seam line defects in silicon-on-insulator by merged epitaxial lateral overgrowth,  Appl. Phys. Lett. Vol 65, pp1638-1640, Sept 1994. 


194. R. Schenker, L. Eichner, H. Vaidya, W.G. Oldham, S Vaidya, "Comparison of UV-damage properties for various fused silica types",  Symposium on Optical Materials for High Power Lasers, Denver, Oct. 1994. 


195. Y. C. Shih, G. G. Zang, C. M. Hu, and W. G. Oldham, "Thin Dielectric Degradation during silicon Selective Epitaxial Growth Process,  Appl. Phys. Lett, V67, pp 2040-42, Oct, 1995 


196. Bokor, J.; Neureuther, A.R.; Oldham, W.G. Advanced lithography for ULSI. IEEE Circuits and Devices Magazine, vol.12, (no.1):11-15, Jan. 1996.


197. Hutchinson, J.M.; Wallraff, G.M.; Hinsberg, W.D.; Opitz, J.; and others "Characterization and modeling of a chemically amplified resist for ArF lithography."(Advances in Resist Technology and Processing XII, Santa Clara, CA, USA, 20-22 Feb. 1995).  Proceedings of the SPIE - The International Society for Optical Engineering, 1995, vol.2438:486-95.


198. Richard Schenker, Lou Eichner, Hem Vaidya, Sheila Vaidya, and William Oldham, "Degradation of fused silica at 193-nm and 213-nm," 1995 SPIE Microlithography Conf., Optical/Laser Microlithography VIII, Vol. 2440, pp. 118-125, 1995.


199. Schenker, R.; Oldham, W., "Effects of compaction on 193 nm lithographic system performance". Journal of Vacuum Science & Technology B vol.14,  no.6  Nov.-Dec. 1996. p.3709-13.


200. Fields, C.H.; Oldham, W.G.; Ray-Chaudhuri, A.K.; Krenz, K.D.; Stulen, R.H. Direct aerial image measurements to evaluate the performance of an extreme ultraviolet projection lithography system. Journal of Vacuum Science & Technology B vol.14,  no.6, Nov.-Dec. 1996. p.4000-3.


201. R. Schenker, F. Piao, W. Oldham, "Material Limitations to 193-nm Lithographic System Lifetimes," SPIE Vol. 2726, Optical Microlithography IX, 1996.


202. Schenker, R.E.; Oldham, W.G. Ultraviolet-induced densification in fused silica. Journal of Applied Physics, vol.82,  no.3 , p.1065-71, Aug. 1997.


203. Oldham, W.G.; Schenker, R.E. 193-nm lithographic system lifetimes as limited by UV compaction. Solid State Technology, vol.40,  no.4 , PennWell Publishing, April 1997. p.95-6, 98, 100, 102.


204. Schenker, R.; Oldham, W.  Compaction-limited system lifetime in 193-mn optical lithography, MICROELECTRONIC ENGINEERING, MAR, 1998, V42:141-144.


205. Schenker, R.; Oldham, W.  Damage-limited lifetime of 193-nm lithography tools as a function of system variables, APPLIED OPTICS, FEB 1, 1998, V37(N4):733-738.


206. Schenker, R.E.; Oldham, W,G.  Ultraviolet-induced densification in fused silica, JOURNAL OF APPLIED PHYSICS, AUG 1, 1997, V82(N3):1065-1071.


207. Schenker, R.; Piao, F.; Oldham, W.G. "Durability of experimental fused silicas to 193-nm-induced compaction", Proceedings of the SPIE - The International Society for Optical Engineering, vol.3051, (Optical Microlithography X, Santa Clara, CA, USA, 12-14 March 1997.) SPIE-Int. Soc. Opt. Eng, 1997. p.44-53.


208. Fields, C.H.; Ray-Chaudhuri, A.K.; Krenz, K.D.; Oldham, W.G.; Stulen, R.H. "Measurement of mid-spatial frequency scatter in extreme ultraviolet lithography systems using direct aerial image measurements", Proceedings of the SPIE - The International Society for Optical Engineering, vol.3048, (Emerging Lithographic Technologies, SantaClara, CA, USA, 10-11 March 1997.) SPIE-Int. Soc. Opt. Eng, 1997. p.356-67.


209. Piao, F.; Schenker, R.; Oldham, W.G. "Temperature dependence of UV-induced compaction in fused silica",  Proceedings of the SPIE - The International Society for Optical Engineering, vol.3051, (Optical Microlithography X, Santa Clara, CA, USA, 12-14 March 1997.) SPIE-Int. Soc. Opt. Eng, 1997. p.907-12.


210. F. Piao, W. G. Oldham, and W. G. Haller, "Thermal Annealing of Deep Ultraviolet (193 nm) Induced Compaction in Fused Silica",  J. Vacuum Science and Tech. B, NOV-DEC, 1998, V16(N6):3419-3421.


211. N. Chokshi, Y. Shroff, W. G. Oldham, et al., "Maskless EUV Lithography,"

Int. Conf. Electron, Ion, and Photon Beam Technology and

Nanofabrication, Marco Island, FL, June 1999.


212. Choksi, N; Pickard, DS; McCord, M; Pease, RFW; Shroff, Y; Chen, YJ; Oldham, W; Markle, D. " Maskless Extreme Ultraviolet lithography."   J. Vac Science & Tech. B, Nov-Dec, 1999, V17(N6):3047-3051.


213. Fan, PA; Oldham, WG; Haller, EE.  "Ultraviolet-induced Densification of Fused Silica."

 J. Appl. Phys. , Apr 1, 2000, V87(N7):3287-3293.


214. Y. Chen, Y. Shroff, W. G. Oldham, "Phase-lead Compensator to Improve the Transient Performance of Comb Actuator,Technical Proceedings of the Third International Conference on Modeling and Simulation of Microsystems, P178-180, 2000.


215. Y. Chen, Y. Shroff, W. G. Oldham, "Transient and Resonant Behavior of Electrically-Damped Microactuators," International Mechanical Engineering Congress & Exposition (IMECE)-MEMS, Orlando, Nov 2000, P7-12.


216. Y. Chen, Y. Shroff, W. G. Oldham, "Switching of a Double-Comb Actuator by Time-Lag Modulation and Electrical- Damping Control," International Mechanical Engineering Congress & Exposition (IMECE)-MEMS, Orlando, Nov 2000, P157-160.


217. Y. Chen, Y. Shroff, W. G. Oldham, "Parasitic-Capacitance Induced Variations of the Transient Behavi or of Damped Microactuators," International Mechanical Engineering Congress & Exposition (IMECE)-MEMS, Orlando, Nov 2000, P325-329.


218. Y. Chen, Y. Shroff, W.G. Oldham, "Transient Optimization of an Electrically-Damped Cantilever-Supported Microactuator and the Pull-In Analysis," International Mechanical Engineering Congress & Exposition (IMECE)-MEMS, Orlando, Nov 2000, P319-324.


219. Lee, SH; Naulleau, P; Goldberg, KA; Piao, F; Oldham, W; Bokor, J; "Phase-shifting point-diffraction interferometry at 193 nm. "APPLIED OPTICS, NOV 1, 2000, V39(N31):5768-5772.


220. Piao, F; Oldham, WG; Haller, EE.  "The mechanism of radiation-induced compaction in vitreous silica. "JOURNAL OF NON-CRYSTALLINE SOLIDS, OCT, 2000, V276(N1-3):61-71.


221. Sang Hun Lee, Piao F, Naulleau P, Goldberg KA, Oldham W, Bokor J. “At-wavelength characterization of DUV-radiation-induced damage in fused silica”. [Conference Paper] SPIE-Int. Soc. Opt. Eng. Proceedings of Spie - the International Society for Optical Engineering, vol.3998, 2000, pp.724-31. USA.


222. Y. Shroff, Y. Chen, W. G. Oldham, "Fabrication of Parallel-Plate Nanomirror Arrays for EUV Maskless Lithography," The 45th International Conference on Electrons, Ions and Photon Beam Technology and Nanofabrication, Washington, May 30- June 1, 2001


223. W. G. Oldham, Y. Shroff, Y. Chen, "Mirror Technology for EUV Maskless Lithography," International Symposium on Microelectronic and MEMS technology, Edinburgh, Scotland, May 30-June 1, 2001


224. Shroff Y. Chen YJ. Oldham W. “Fabrication of parallel-plate nanomirror arrays for extreme ultraviolet maskless lithography .”  [Article] Journal of Vacuum Science & Technology B. 19(6):2412-2415, 2001 Nov-Dec

225. W. G. Oldham and Y. Shroff  ,“Mirror-based pattern generation for maskless lithography”, Microelectronic Engineering 73-74, pp 42-47, June 2004.

226. B. Nikolic, B. Wild, V. Dai, B. Warlick, A. Zakhor, W. Oldham,  “Layout Decompression chip for maskless lithography”, SPIE-Int Soc. Opti. Eng. Proceedings of Spie Vol 5374, pp 1092-9, 2004


227. Y. Shroff, Y Chen, W. Oldham,  “Image Optimization for maskless lithography”,   SPIE-Int Soc. Opti. Eng. Proceedings of Spie Vol 5374, pp 637-47, 2004

228. Y. Chen, CC Hui, Y. Shroff, JS Wang, W. G. Oldham, "Design and fabrication of tilting and piston micromirrors for maskless lithography,  Proceedings of SPIE 5751, Emerging Lithographic Technologies, p1023, 2005
229. F. Piao, W. G. Oldham, "The mechanism of ionization radiation-induced compaction in fused silica", Proc. SPIE 6403, Laser Induced Damage in Optical Materials, 2007
SPIE | Proceeding | Design and fabrication of tilting and piston micromirrors for maskless lithography SPIE | Proceeding | Design and fabrication of tilting and piston micromirrors for maskless lithography




1. U.S. Letters Patent #4,396,996 "Monolithic Static Memory Cell and Method for Its Operation", with Siemens Aktiengesellschaft, Berlin and Munich, filed August 19, 1981.  


2. U.S. Letters Patent #4,441,036, "Monolithically Integrated Circuit with Connectible and/or Disconnectible Circuit Portions", with Siemens Aktiengesellschaft, Berlin and Munich, filed August 19, 1981.  


3. U.S. Letters Patent #4,450,537, "Monolithically Integrated Read-Only Memory", with Siemens Aktiengesellschaft, Berlin and Munich, filed August 19, 1981. 


4. U.S. Letters Patent #4,013,489, "Process for Forming a Low Resistance Interconnect in MOS N-Channel Silicon Gate Integrated Circuit", with Intel Corporation, Santa Clara, filed February 10, 1976.  


5. European Patent #EP 0 046 551, "Monolithische Statische Speicherzelle und Verfahren zu Ihram Betrieb", with Siemens Aktiengesellschaft, Berlin and Munich, filed March 3, 1982.  


6. European Patent #EP 0 046 552, "Monolithiech Integrierte Schaltung mit zu-und/oder Abechaltbaren Schaltungstellen", with Siemens Aktiengesellschaft, Berlin and Munich, filed August 14, 1981. (issued Nov 1989)  


7. European Patent #EP 0 046 550, "Monolithiech Integrierter Festwertspeicher", with Siemens Aktiengesellschaft, Berlin and Munich, filed March 3, 1982.  


8. European Patent #DT 27 04 626, "Verfahren zur Bildung einer Verbindungszone in Einem Silizium-Substrat bei der Herstellung von n-Kanal  Siliziumgate-Bauelementen in Integrierter MOS-Technologie", with Intel Corporation, Santa Clara, filed February 10, 1976.  


9. European Patent #DT 26 15 441, Verfahren zur Herstellung einer integrierten Schaltung aus Monokristallinem Silizium", with Intel Corporation, Santa Clara, filed 1976.  


10. US Letters Patent #5,233,460, "Method and Means for Reducing Speckle in Coherent Laser Pulses", with W. N. Partlo, filed Jan 31, 1992 (issued August 3, 1993).

11. US Letters Patent #7075699 , "Double hidden flexure microactuator for phase mirror array", W. G. Oldham, Yijian Chen, Yashesh Shroff, filed Sept 28, 2004

12. US Letters Patent #7141806, "EUV Light Source collector erosion mitigation", W. N. Partlo, A. I. Ershov, I. V. Fomenkov, D. W. Myers, W. Oldham , filed Nov 28,2005

13.US Letters Patent #8075732, "EUV collector debris management", W.N.Partlo, R. L. Sandstrom, I. V. Fomenkov, A. I. Ershov, W.Oldham, W. F. Marx, O. Hemberg, filed Nov 1, 2004

14 US Letters Patent #20120292527, "Filter for Material Supply Appartus", I. V. Fomenkov, W. N. Partlo, G. O. Vaschenko, W. Oldham, filed May 20, 2011