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1st Capacitive-Piezoelectric Transducer [2010]
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First Demonstration of Silicide-Based Gaps [2010]
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Simultaneous Strong Electromechanical Coupling and High Q<\/em> Via Partial ALD-Filled Gaps [2010]
Read More<\/a><\/figcaption><\/figure><\/li><\/ul><\/figure>\n\n\n\n\n<\/div>\n<\/div>\n\n\n\nThe year 2010 introduced numerous firsts: a silicide-based release process that made possible instant formation of high aspect-ratio gaps without a need for lengthy undercut etching; the capacitive-piezoelectric transducer that maximizes the quality factor of any piezoelectric device while enhancing drift stability; and partial-ALD filling to achieve electrode-to-resonator gaps smaller than 50 nm–all methods still in use today. <\/p>\n\n\n\n
L.-W. Hung and C. T.-C. Nguyen, \u201cSilicide-Based Release of High Aspect Ratio Microstructures<\/a>,\u201d Tech. Digest<\/em>, 23rd<\/sup> IEEE Int. Conf. on Micro Electro Mechanical Systems (MEMS\u201910), Hong Kong, China, Jan. 24-28, 2010, pp. 120-123.<\/p>\n\n\n\n
B. Kim, M. Akgul, Y. Lin, W.-C. Li, Z. Ren, and C. T.-C. Nguyen, \u201cAcceleration sensitivity of small-gap capacitive micromechanical resonator oscillators<\/a>,\u201d Proceedings<\/em>, 2010 IEEE Int. Frequency Control Symp., Newport Beach, California, June 1-4, 2010, pp. 273-278.<\/p>\n\n\n\n
L.-W. Hung and C. T.-C. Nguyen, \u201cCapacitive-piezo transducers for higher Q<\/em> contour-mode AlN resonators at 1.2 GHz<\/a>,\u201d Tech. Digest<\/em>, 2008 Solid-State Sensor, Actuator, and Microsystems Workshop, Hilton Head, South Carolina, June 6-10, 2010, pp. 463-466.<\/p>\n\n\n\n
M. Akgul, B. Kim, Z. Ren, and C. T.-C. Nguyen, \u201cCapacitively transduced micromechanical resonators with simultaneous low motional resistance and Q<\/em> >70,000<\/a>,\u201d Tech. Digest<\/em>, 2008 Solid-State Sensor, Actuator, and Microsystems Workshop, Hilton Head, South Carolina, June 6-10, 2010, pp. 467-470.<\/p>\n\n\n\n
L.-W. Hung and C. T.-C. Nguyen, \u201cQ<\/a><\/em>-boosted AlN array-composite resonator with Q<\/em> >10,000<\/a>,\u201d Tech. Digest<\/em>, IEEE Int. Electron Devices Mtg., San Francisco, California, Dec. 6-8, 2010, pp. 162-165.<\/p>\n","protected":false},"excerpt":{"rendered":"