Ava Jiang Tan


Awards & Research Highlights

Selected Publications

Please see my Google Scholar page for a complete list of publications.
  1. Ava J. Tan, Li-Chen Wang, Yu-Hung Liao, Jong-Ho Bae, Chenming Hu, Sayeef Salahuddin. Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET. 2020 Device Research Conference (2020 DRC).
  2. Ava J. Tan, Milan Pešić, Luca Larcher, Yu-Hung Liao, Li-Chen Wang, Jong-Ho Bae, Chenming Hu, Sayeef Salahuddin. Hot Electrons as the Dominant Source of Degradation for Sub-5nm HZO FeFETs. Accepted, to appear in the 2020 Symposia on VLSI Technology and Circuits.
  3. Ava J. Tan, Korok Chatterjee, Jiuren Zhou, Daewoong Kwon, Yu-Hung Liao, Suraj Cheema, Chenming Hu, Sayeef Salahuddin. Experimental Demonstration of a Ferroelectric HfO2-based Content Addressable Memory Cell. IEEE Electron Device Letters, 41(2), 240-243 (2020).
  4. Ava J. Tan, Zhongwei Zhu, Hwan Sung Choe, Chenming Hu, Sayeef Salahuddin, Alex Yoon. Ferroelectric Si-doped HfO2 Capacitors for Next-Generation Memories. 2019 International Symposia on VLSI Technology, Systems and Applications (VLSI-TSA 2019).
  5. Ava J. Tan, Ajay K. Yadav, Korok Chatterjee, Daewoong Kwon, Sangwan Kim, Chenming Hu, Sayeef Salahuddin. A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology. IEEE Electron Device Letters, 39(1), 95-98 (2018).
  6. Ava J. Tan, Justin C. Wong, Ajay K. Yadav, Korok Chatterjee, Daewoong Kwon, Sangwan Kim, Golnaz Karbasian, Sayeef Salahuddin. Characterization of the Interface States of Ferroelectric Hafnium Zirconium Oxide. SRC (Semiconductor Research Corporation) TECHCON 2017.
  7. Daewoong Kwon, Korok Chatterjee, Ava J. Tan, Ajay K. Yadav, Hong Zhou, Angada B. Sachid, Roberto dos Reis, Chenming Hu, Sayeef Salahuddin. Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors. IEEE Electron Device Letters, 39(2), 300-303 (2018).
  8. Korok Chatterjee, Sangwan Kim, Golnaz Karbasian, Ava J. Tan, Ajay K. Yadav, Asif I. Khan, Chenming Hu, Sayeef Salahuddin. Self-aligned, Gate Last, FDSOI, Ferroelectric gate Memory Device with 5.5 nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery. IEEE Electron Device Letters, 38(10), 1379-1382 (2017).

Selected Presentations/Talks

  1. Ava J. Tan. Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET, in 2020 DRC (Device Research Conference), Columbus, OH, USA. June 22, 2020.
  2. Ava J. Tan. Ternary Content Addressable Memories Based on Ferroelectric Hafnium Zirconium Oxide, in 2019 ASCENT (Applications and Systems Driven Center for Energy-Efficient Integrated Nanotechnologies) Annual Review, South Bend, IN, USA. August 15, 2019.
  3. Ava J. Tan. Ferroelectric Si-doped HfO2 Capacitors for Next-Generation Memories, in 2019 International Symposia on VLSI Technology, Systems and Applications (VLSI-TSA 2019), Hsinchu, Taiwan. April 24, 2019.
  4. Ava J. Tan. Ferroelectric Hafnium Oxide: A Contender for Next-Generation Memory Technologies, Invited Poster in 2018 International Electron Devices Meeting (IEDM), San Francisco, CA, USA. December 4, 2018.
  5. Ava J. Tan. A Nitrided Interfacial Oxide for Interface State Improvement in Ferroelectric Transistor Technology, in 2017 Lam Research Technical Symposium, Fremont, CA, USA. October 2, 2017.
  6. Ava J. Tan. Characterization of the Interface States of Ferroelectric Hafnium Zirconium Oxide, in SRC (Semiconductor Research Corporation) TECHCON 2017, Austin, TX, USA. September 11, 2017.
  7. Ava Tan. Ferroelectricity in HfO2 thin films as a function of Zr doping, in 2017 International Symposia on VLSI Technology, Systems and Applications (VLSI-TSA 2017), Hsinchu, Taiwan. April 25, 2017.
  8. Ava Tan. Spray Pyrolyzed Lanthanum-doped Zirconia for Thin Film Transistor Applications. Center for E3S (Energy Efficient Electronics Science), Berkeley, CA, USA. August 6, 2015.

Teaching Experience