Ava J. Tan

ava at eecs dot berkeley dot edu

Hello! I'm Ava, a Ph.D candidate at U.C. Berkeley studying physical electronic devices under Professor Sayeef Salahuddin in the Laboratory for Emerging and Exploratory Devices. My research interests include nonvolatile ferroelectric CMOS-compatible memories and their architectural potential for realizing brain-inspired computing paradigms and energy-efficient hardware for in-memory computing. I am generally interested in various emerging memory technologies to support next-generation computing needs.

Previously, I received a B.S in Electrical & Computer Engineering and a minor in Computer Science from Cornell University in May of 2016. As an undergraduate, I worked with Professor Huili (Grace) Xing, Professor Vivek Subramanian, and Professor Alyosha Molnar.

My Ph.D research is supported by the National Defense Science & Engineering Graduate (NDSEG) Fellowship (2018 - present) and the Lam Research Graduate Fellowship (2017 - 2018).

Awards & Research Highlights

Selected Participant for Rising Stars 2020: An Academic Career Workshop for Women in EECS. [news]

2020 Device Research Conference Best Student Paper Award. [paper] [news] [news] [news]

February 2020 IEEE EDL Editor's Pick / IEEE Spectrum Spotlight. [paper] [spotlight] [news] [news]

2019 ASCENT Center Review Best Poster Award. [news]

2019 VLSI-TSA Best Student Paper Award. [paper] [news]

2018 IEEE EDS George Smith Award. [paper] [news] [award picture]

2017 Lam Research Technical Symposium Best Poster Award. [award picture]

2017 SRC TECHCON Best in Session Award. [news] [news] [award picture]

Selected Publications

Please see my Google Scholar page for a complete list of publications.

Ava J. Tan, Yu-Hung Liao, Li-Chen Wang, Jong-Ho Bae, Chenming Hu, Sayeef Salahuddin. Ferroelectric HfO2 Memory Transistors with High-K Interfacial Layer and Write Endurance Exceeding 10^10 Cycles. Under review.

Ava J. Tan, Li-Chen Wang, Yu-Hung Liao, Jong-Ho Bae, Chenming Hu, Sayeef Salahuddin. Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET. 2020 Device Research Conference (2020 DRC).

Ava J. Tan, Milan Pešić, Luca Larcher, Yu-Hung Liao, Li-Chen Wang, Jong-Ho Bae, Chenming Hu, Sayeef Salahuddin. Hot Electrons as the Dominant Source of Degradation for Sub-5nm HZO FeFETs. 2020 IEEE Symposium on VLSI Technology.

Ava J. Tan, Korok Chatterjee, Jiuren Zhou, Daewoong Kwon, Yu-Hung Liao, Suraj Cheema, Chenming Hu, Sayeef Salahuddin. Experimental Demonstration of a Ferroelectric HfO2-based Content Addressable Memory Cell. IEEE Electron Device Letters, 41(2), 240-243 (2020).

Ava J. Tan, Zhongwei Zhu, Hwan Sung Choe, Chenming Hu, Sayeef Salahuddin, Alex Yoon. Ferroelectric Si-doped HfO₂ Capacitors for Next-Generation Memories. 2019 International Symposia on VLSI Technology, Systems and Applications (VLSI-TSA 2019).

Ava J. Tan, Ajay K. Yadav, Korok Chatterjee, Daewoong Kwon, Sangwan Kim, Chenming Hu, Sayeef Salahuddin. A Nitrided Interfacial Oxide for Interface State Improvement in Hafnium Zirconium Oxide-Based Ferroelectric Transistor Technology. IEEE Electron Device Letters, 39(1), 95-98 (2018).

Ava J. Tan, Justin C. Wong, Ajay K. Yadav, Korok Chatterjee, Daewoong Kwon, Sangwan Kim, Golnaz Karbasian, Sayeef Salahuddin. Characterization of the Interface States of Ferroelectric Hafnium Zirconium Oxide. SRC (Semiconductor Research Corporation) TECHCON 2017.

Daewoong Kwon, Korok Chatterjee, Ava J. Tan, Ajay K. Yadav, Hong Zhou, Angada B. Sachid, Roberto dos Reis, Chenming Hu, Sayeef Salahuddin. Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors. IEEE Electron Device Letters, 39(2), 300-303 (2018).

Korok Chatterjee, Sangwan Kim, Golnaz Karbasian, Ava J. Tan, Ajay K. Yadav, Asif I. Khan, Chenming Hu, Sayeef Salahuddin. Self-aligned, Gate Last, FDSOI, Ferroelectric gate Memory Device with 5.5 nm Hf_0.8Zr_0.2O₂, High Endurance and Breakdown Recovery. IEEE Electron Device Letters, 38(10), 1379-1382 (2017).

Selected Presentations/Talks

Ava J. Tan. Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFET, in 2020 DRC (Device Research Conference), Columbus, OH, USA. June 22, 2020.

Ava J. Tan. Hot Electrons as the Dominant Source of Degradation for Sub-5nm HZO FeFETs, in 2020 IEEE Symposium on VLSI Technology, Honolulu, HI, USA. June 17, 2020.

Ava J. Tan. Ternary Content Addressable Memories Based on Ferroelectric Hafnium Zirconium Oxide, in 2019 ASCENT (Applications and Systems Driven Center for Energy-Efficient Integrated Nanotechnologies) Annual Review, South Bend, IN, USA. August 15, 2019.

Ava J. Tan. Ferroelectric Si-doped HfO₂ Capacitors for Next-Generation Memories, in 2019 International Symposia on VLSI Technology, Systems and Applications (VLSI-TSA 2019), Hsinchu, Taiwan. April 24, 2019.

Ava J. Tan. Ferroelectric Hafnium Oxide: A Contender for Next-Generation Memory Technologies, Invited Poster in 2018 International Electron Devices Meeting (IEDM), San Francisco, CA, USA. December 4, 2018.

Ava J. Tan. A Nitrided Interfacial Oxide for Interface State Improvement in Ferroelectric Transistor Technology, in 2017 Lam Research Technical Symposium, Fremont, CA, USA. October 2, 2017.

Ava J. Tan. Characterization of the Interface States of Ferroelectric Hafnium Zirconium Oxide, in SRC (Semiconductor Research Corporation) TECHCON 2017, Austin, TX, USA. September 11, 2017.

Ava Tan. Ferroelectricity in HfO₂ thin films as a function of Zr doping, in 2017 International Symposia on VLSI Technology, Systems and Applications (VLSI-TSA 2017), Hsinchu, Taiwan. April 25, 2017.

Ava Tan. Spray Pyrolyzed Lanthanum-doped Zirconia for Thin Film Transistor Applications. Center for E3S (Energy Efficient Electronics Science), Berkeley, CA, USA. August 6, 2015.

Ava Jiang Tan

Awards & Research Highlights

Selected Publications

Selected Presentations/Talks

Teaching Experience