Andrew R. Neureuther, 509 Cory Hall,                           Version 01/11/05

Conexant Distinguished Professor, 

Electrical Engineering and Computer Sciences 

                         

    

UCB TCAD PROCESS TECHNOLOGY NOTES or  (PTN Direct)

 

LAVA (remote simulation) or   (LAVA Direct)

 

CLASSES    TEACHING   or   (EE 243 Direct)

 

 

ADMINISTRATION       CONTACT INFORMATION     RESEARCH

                    

RECENT TALK    BIO/PUBS   LITHOGRAPHY WEB SITES 

 

Tentative Office Hours 11 M, 1 Tu, 2 F
Tentative Weekly Schedule (Matrix Form in PDF).

 

 CLASSES SPRING 06:

        EE 243 Advanced IC Processing and Layout, Tu, Th 11-12:30, 299 Cory

        EE 298-10 Integrated Circuit Technology Seminar, F 11, Room 531 Cory 

          EECS 298-39  Feature Level Compensation and Control  Seminar, M 2, Wang Room 531 Cory

          EECS 298-12  Solid State Technology and Devices Seminar, F 1, Hogan Room 535 Cory

CONTACT INFORMATION: 

email: neureuth@eecs.berkeley.edu

Phone/Fax: Tel. 510-642-4590, Fax.  510-642-2739

Address: Professor Andrew R. Neureuther, Dept. EECS 231 Cory Hall, 

               University of California, Berkeley, CA 94720-1770, 

Research Services Assistant: Charlotte Jones, 510-643-2834, cmjones@eecs (mailto)
Research Services Officer: FLCC  Ellen Lenzi, 510-643-9665, lenzi@eecs (mailto)
Research Services Officer: SRC/DARPA 
Carol Zalon, 510-642-xxxx, zalon@eecs (mailto)   

ADMINISTRATIVE DUTIES:

          Faculty PI, U.C. Discovery, Feature Level Compensation and Control Program
          EE ABET Coordinator,

          Faculty Coordinator, EECS Internship Program

          Faculty Coordinator, SUPERB (Summer Undergraduate Program, CoE) 

          Member, Applied Science and Technology, Graduate Group 

TEACHING:

Spring 2005, I will  be teaching the 3 unit graduate course EE 243 Advanced IC Procesing and Layout. This course emphasizes the physical principles and mathematical models used to characterize fabrication and inspection processes in microfabrication technology. It begins with a brief overview of the CMOS fabrication process flow, its key technology elements, and the issues that limit these processes. We then turn to the key process steps and spend about 5 weeks on mechanisms and models for oxidation, diffusion, implantation, CVD and dry etching. This is followed by 2 weeks on statistical process control (SPC) and design of experiments (DOE) as used to support high yield manufacturing. At this point there is a midterm exam. We then spend 4 weeks on developing advanced models for optical image formation, resist response, defect printability, inspection and next generation electron-beam and EUV exposures systems. Two weeks are then spent on interconnect processes and integration process flow/layout. The last week is extensions to nanfabrication and oral project reports. There is one  review lecture before the final.

Fall 2005, I hope to teach the 4 unit Undergrduate Course EECS 40 Introduction to Microelectronic Circuits, The course begins with models for circuits, their analysis using node and mesh techniques based on Kirchhoff’s laws, and equivalent circuits. Capacitors and inductors and the transisent analysis of signals associated with them are then considered. Complex numbers (phasors) are introduced to both efficiently represent sinusoidal signals and analyze the frequency response of circuits. The design of circuits using very high-gain operational-amplifiers is then considered. The operation of semiconductor diode and MOSFET devices are overviewed and simple circuit models for them are used to analyze their usefulness in basic applications. Basic concepts from logic circuits including simple synthesis, timing diagrams, glitching, and circuits for latches and clocks are described. The more challenging mathematics of second-order circuit response and total (transient plus forded solutions) are briefly treated. The last topic is a survey of microfabrication and nano technology.

UCB TCAD PROCESS TECHNOLOGY NOTES: (go to PTN for more information)

This is an evolving mini-library of snipits of materials on physically based model for characterizing microfabrication technology. It tends emphasize optical lithography as this is the main interest of the TCAD Group at UC Berkeley. 
The purpose is to make available globally two types of information of likely practical use in microfabrication.
    Materials that supplement existing textbooks on process technology and might be used in classes. 
    Information on concepts and results from research that likely contribute to the practice of microfabrication. 

RESEARCH:

My research interests are photolithography and integrated circuit process technology simulation. You can view recent results from the SAMPLE Technology CAD Group. 

LAVA Remote Simulation: (go to LAVA for more information)

The Lithography Analysis through Virtual Access web site facilitates remote simulation using TCAD tools from the SAMPLE Group. This includes SPLAT, SAMPLE, SIMPL, TEMPEST, STORM, PBODY-BEAM and SAMPLE3D. There are a number of application-oriented graphical applets for user convenience. It is also possible to remotely launch TEMPEST and  the Pattern Matcher.

The research of my group is sponsored in part under the Feature Level Compensation and Control project in the State of California and Industry U.C. Discovery program. It is also supported in part under the Network for Advanced Lithography  sponsored by DARPA/SRC.

LITHOGRAPHY WEB SITES: (go to LAVA for additional information on TCAD)